TPCC8008(TE12L,QM)

Vgs(th) (Max) @ Id:	2.5V @ 1A
Package / Case:	8-PowerVDFN
Supplier Device Package:	8-TSON Advance (3.3x3.3)
Mounting Type:	Surface Mount
Operating Temperature:	150°C (TJ)
Power Dissipation (Max):	700mW (Ta), 30W (Tc)
FET Feature:	--
Input Capacitance (Ciss) (Max) @ Vds:	1600pF @ 10V
Vgs (Max):	±25V
Gate Charge (Qg) (Max) @ Vgs:	30nC @ 10V
Series:	U-MOSIV
Rds On (Max) @ Id, Vgs:	6.8 mOhm @ 12.5A, 10V
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C:	25A (Ta)
Drain to Source Voltage (Vdss):	30V
Technology:	MOSFET (Metal Oxide)
FET Type:	N-Channel
Part Status:	Active
Packaging:	Tape & Reel (TR)

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TPCC8008 (TE12L, QM) is a single voltage-controlled transistor from the TPCC8008 (Transistor Production Control Center) range. It has a superior electrical performance compared to other transistors due to its advanced technology, which allows a higher switching speed and faster response times.The TPCC8008 is a field-effect transistor (FET) made of insulated-gate bipolar transistor (IGBT). IGBTs are suitable for high-power switching applications because of their superior switching characteristics, such as high-current, high-voltage, and fast-switching capability. The TPCC8008 has both high- and low-side control circuits that can handle up to 180 V and 36 A.The application field of the TPCC8008 is vast and varied. It can be used in many industries, including automotive, aerospace, defense, and consumer electronics. In automotive applications, it can be used for controlling electric power steering, fuel injection, and other engine controls. It can also be used in defense applications, either as a power component or for controlling electronic warfare systems.The TPCC8008 has many advantages over other FETs, such as higher electron manipulation capability and higher breakdown voltage. This makes it ideal for high-power switching applications. In addition, the TPCC8008 is made from top notch materials and features intricate design features, which makes it more reliable and rugged than other FETs.The working principle of the TPCC8008 is simple yet effective. When a voltage is applied to the gate of the FET, an electron cloud is formed around it, which increases the resistance of the channel. The resistance of this cloud can be adjusted using the gate voltage, thus controlling the flow of current through the FET. This makes the TPCC8008 an ideal choice for voltage-controlled applications such as H-bridges and motor drivers.The TPCC8008 is an all-purpose FET that is highly reliable and has excellent electrical characteristics, making it one of the most popular transistors on the market. It is ideal for high-power switching applications, such as motor controllers and automated processes. Its rugged design and versatile application field make it an ideal component for any electrical system.

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