Allicdata Part #: | TPH11006NLLQTR-ND |
Manufacturer Part#: |
TPH11006NL,LQ |
Price: | $ 0.22 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 60V 17A 8SOP |
More Detail: | N-Channel 60V 17A (Tc) 1.6W (Ta), 34W (Tc) Surface... |
DataSheet: | TPH11006NL,LQ Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.19435 |
Vgs(th) (Max) @ Id: | 2.5V @ 200µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-SOP Advance (5x5) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta), 34W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 2000pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 23nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 11.4 mOhm @ 8.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 17A (Tc) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TPH11006NL,LQ is a highly efficient and reliable single N-Channel MOSFET transistor. It can be utilized in many different electronic applications.
The TPH11006NL,LQ properties make it ideal for use in power control and level shifting applications. It features low parasitic capacitances and low power consumption. This makes it ideal for precision switching and amplification. The on-resistance of the TPH11006NL,LQ is very low, making it one of the most efficient transistors to use in high power applications.
The TPH11006NL,LQ is a high voltage transistor with a breakdown voltage rating of 110V. This makes it a suitable device for many automotive, industrial and telecommunications applications. The TPH11006NL,LQ is also resistant to ESD and can handle transient overvoltage events.
The working principle of the TPH11006NL,LQ is relatively simple. In this MOSFET transistor, the gate voltage controls the current flow from the source to the drain. When the gate voltage is high, the current flow increases while a low gate voltage reduces the current flow. The TPH11006NL,LQ has a low on-resistance and so it can efficiently control high power applications. This makes it suitable for many applications in power supplies, power switching or amplification.
In addition, the TPH11006NL,LQ can also be used in high voltage or signal level shifting or signal conversion applications. It can be used in conjunction with voltage clamping and signal conditioning circuits to provide precision level shifting or signal conversion. The low parasitic capacitances and low power consumption of the TPH11006NL,LQ make it well suited for high precision switching and amplification applications.
The TPH11006NL,LQ transistor is a reliable and versatile N-Channel MOSFET. Due to its low parasitic capacitances, low power consumption and high voltage rating, it is suitable for many different applications in power control, level shifting and signal conversion. The gate voltage of the TPH11006NL,LQ controls the current flow from the source to the drain, making it efficient and reliable for high power applications.
The specific data is subject to PDF, and the above content is for reference
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