TPH1R712MD,L1Q

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TPH1R712MD,L1Q application field and working principle

Introduction: The TPH1R712MD,L1Q is a vertical DMOS transistor. It utilizes advanced lateral DMOS power field effect technology and is intended for use in consumer, industrial and automotive applications.

Application field: The TPH1R712MD,L1Q is suitable for switching, inrush current limiting and DC-DC converter selector applications, as well as in other applications like film voltage regulators, inverters and AC-DC converters. As a switching device, it offers low RDS(on), low gate charge and fast switching times.

Working principle: This type of transistor is a vertical DMOS, which is composed of two back-to-back interconnected MOSFETs that are fabricated in a vertical structure. A vertical junction is created at the point of connection between the source and the main body. This vertical junction is necessary for the control of the drain current. The voltage drop between the source and the main body is proportional to the drain current, and this voltage drop is called the gate-source voltage. To increase or decrease the drain current, a signal is applied to the gate of the MOSFET, and it will be applied to the vertical junction between the source and the main body. The gate-source voltage controls the drain current. When the gate voltage is increased or decreased, it will decrease or increase the drain current. This is the operation principle of the TPH1R712MD,L1Q.

Conclusion: The TPH1R712MD,L1Q is a vertical DMOS transistor that is suitable for use in consumer, industrial and automotive applications. It can be used in a variety of applications, including switching, inrush current limiting and DC-DC converter selector applications. The working principle of this transistor is simple: The gate voltage applied to the vertical junction between the source and the main body controls the drain current, and when this voltage is increased or decreased, the drain current will decrease or increase accordingly.

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