Allicdata Part #: | TPH14006NHL1QTR-ND |
Manufacturer Part#: |
TPH14006NH,L1Q |
Price: | $ 0.32 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N CH 60V 14A 8-SOP ADV |
More Detail: | N-Channel 60V 14A (Ta) 1.6W (Ta), 32W (Tc) Surface... |
DataSheet: | TPH14006NH,L1Q Datasheet/PDF |
Quantity: | 5000 |
5000 +: | $ 0.28908 |
Vgs(th) (Max) @ Id: | 4V @ 200µA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-SOP Advance (5x5) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 1.6W (Ta), 32W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1300pF @ 30V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 16nC @ 10V |
Series: | U-MOSVIII-H |
Rds On (Max) @ Id, Vgs: | 14 mOhm @ 7A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 6.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 14A (Ta) |
Drain to Source Voltage (Vdss): | 60V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TPH14006NH,L1Q is a single n-channel enhancement-mode vertical DMOSFET transistor with a low On-resistance, fast switching speed, and low capacitance. This state-of-the-art technology makes it suitable for applications ranging from power management and audio power amplifiers, to switch mode power supplies and battery powered systems. The device is designed for easy mounting and excellent thermal management, along with good reliability and a wide temperature range.
The TPH14006NH,L1Q is a vertical-structure, multi-gate transistor, which enables high current and low drain-source On-resistance (RDS(on)), combined with a fast switching speed. It is ideally suited for switching applications and can handle peak gate drive currents up to 8A.
The gate of the TPH14006NH,L1Q can be driven directly by PWM signals, or controlled through negative logic, with gate voltage of around -3 volts. This makes the device suitable for sensing and switching a wide range of load currents, up to 1200mA. The device has a maximum drain-source breakdown voltage of 600V, which is suitable for a range of applications.
The low On-resistance of the TPH14006NH,L1Q makes it ideal for low loss power switch applications, and its simplified driver-gate interface eliminates the need for a complicated gate driver circuit. This allows for reduced system complexity and cost, making the device suitable for a wide range of cost-sensitive applications. Its low capacitance makes the device suitable for high speed switching and can handle frequencies up to 1MHz.
The TPH14006NH,L1Q is also designed for easy mounting and good thermal management. Its package has a robust leadframe design and is encapsulated with fully molded plastic material. This allows for excellent hermeticity and thermal stability, making the device reliable under harsh operating conditions. The device is also RoHS compliant and is rated for a wide temperature range, from -55°C to +150°C.
In conclusion, the TPH14006NH,L1Q is an ideal device for applications such as power management, audio power amplifiers, switch mode power supplies and battery powered systems, due to its robust design, low RDS, fast switching speed and wide temperature range. The device also has a low capacitance and is suitable for high speed switching. It is easy to mount and is reliable for use in harsh environments, making it a good choice for cost-sensitive applications.
The specific data is subject to PDF, and the above content is for reference
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