TPH1110ENH,L1Q

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The TPH1110ENH,L1Q is a single-voltage FET, meaning that it operates on a single voltage level. This device features P-channel enhancement-mode technology, allowing for increased performance, power savings and longer life. It is designed for use in a variety of applications, from automotive, to consumer electronics and industrial.

The TPH1110ENH,L1Q is designed to operate in a range from -55°C to +150°C, making it a great choice for applications that require high-applied temperature. The FET features a low rDS(on) of 35mOhm and a max gate drive of 21V, providing increased performance in applications requiring low resistance and/or high voltage. The device has a gate charge of 6.6nC, providing low power dissipation and improved efficiency.

The TPH1110ENH,L1Q utilizes a gate-source-drain construction, allowing for increased performance and better power savings. The P-channel construction also provides superior immunity to ESD damage and improved static-drain feedback protection. This device is designed for use in a range of applications that require high switching speed, such as in power management, lighting, and high frequency applications, among others.

In terms of its working principle, the FET operates in the same way as any enhancement-mode P-channel MOSFET. When the gate voltage is increased, the channel conducts and the drain current is increased. Conversely, when the gate voltage is decreased, the drain current is decreased and the FET will shut off. The gate voltage must not exceed the maximum stated in the datasheet.

The TPH1110ENH,L1Q offers significant savings in terms of power consumption compared to other devices with similar performance ratings. The device has good temperature stability, meaning that it can operate over a range of temperatures without having to reduce its performance, making it a great choice for applications needing high temperature capability. The device features very low on-state resistance and high gate-source voltages, providing excellent performance in high-current and/or high-voltage applications.

In conclusion, the TPH1110ENH,L1Q is a single-voltage P-channel enhancement-mode FET that works according to the same principles as any other P-channel enhancement-mode FET. The device offers excellent performance and can be used in a variety of applications, from automotive to consumer electronics, by providing increased performance and better power savings compared to other devices with similar ratings. It has good temperature stability, making it ideal for high-temperature applications, while providing very low on-state resistance and high gate-source voltages. This makes it an ideal choice for use in applications requiring high switching speeds, such as power management.

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