Allicdata Part #: | TPH1R005PLL1QTR-ND |
Manufacturer Part#: |
TPH1R005PL,L1Q |
Price: | $ 0.64 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET N-CH 45V 150A |
More Detail: | N-Channel 45V 150A (Tc) 960mW (Ta), 170W (Tc) Surf... |
DataSheet: | TPH1R005PL,L1Q Datasheet/PDF |
Quantity: | 1000 |
5000 +: | $ 0.58206 |
Vgs(th) (Max) @ Id: | 2.4V @ 1mA |
Package / Case: | 8-PowerVDFN |
Supplier Device Package: | 8-SOP Advance (5x5) |
Mounting Type: | Surface Mount |
Operating Temperature: | 175°C (TJ) |
Power Dissipation (Max): | 960mW (Ta), 170W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 9600pF @ 22.5V |
Vgs (Max): | ±20V |
Gate Charge (Qg) (Max) @ Vgs: | 99nC @ 10V |
Series: | U-MOSIX-H |
Rds On (Max) @ Id, Vgs: | 1.04 mOhm @ 50A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 150A (Tc) |
Drain to Source Voltage (Vdss): | 45V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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A field-effect transistor (FET) is a type of transistor that utilizes a three-dimensional electric field to control an electrical current. The acronym TPH1R005PL,L1Q denotes a type of Field-effect transistor (FET) that is constructed using a Metal-Oxide-Semiconductor Field-effect Transistor (MOSFET). In this article, we will take a closer look at the application field and working principle of TPH1R005PL,L1Q.
The TPH1R005PL,L1Q is a single power MOSFET that is designed to address the needs of high voltage and low on-resistance applications. It is designed to handle both AC and DC electrical current and can handle up to 500 mA of current. The device has a threshold voltage rating of 5 volts and has an R&D threshold voltage range of -5 to 5 Volts. In addition, it has an on-resistance rating of 5 Ohms and a maximum voltage rating of 12 Volts. This makes the TPH1R005PL,L1Q suitable for a wide range of applications including, but not limited to, DC-DC conversion, motor controllers, and AC adapter switching applications.
The operating principle of the TPH1R005PL,L1Q is based on the concept of a "metal-oxide-semiconductor field-effect transistor". This type of transistor is composed of three layers, the source, drain and gate. The MOSFET works on the principle of a three-dimensional electric field. The source and drain are usually made of metal and the gate is composed of two separated layers of silicon (Si). The upper layer of silicon acts as the gate and the lower layer acts as the body. This structure enables the electric field to control the current flow between the source and the drain of the transistor.
The operation of the MOSFET is based on the principle of an "accelerator" that works on the principal of an electric field. When the voltage applied to the gate of the MOSFET is increased, the electric field increases, thus increasing the current flow between the source and drain. This allows the device to be used for a variety of applications such as DC-DC conversion, motor controllers, and AC adapter switching applications.
In conclusion, the TPH1R005PL,L1Q is a single power MOSFET that has a threshold voltage rating of 5 volts, an R&D threshold voltage range of -5 to 5 volts, and a maximum voltage rating of 12 volts. Its operating principle is based on the concept of a metal-oxide-semiconductor field-effect transistor and it is suitable for a wide range of applications including, but not limited to, DC-DC conversion, motor controllers, and AC adapter switching applications.
The specific data is subject to PDF, and the above content is for reference
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