Allicdata Part #: | TPS1100DR-ND |
Manufacturer Part#: |
TPS1100DR |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 15V 1.6A 8-SOIC |
More Detail: | P-Channel 15V 1.6A (Ta) 791mW (Ta) Surface Mount 8... |
DataSheet: | TPS1100DR Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 791mW (Ta) |
FET Feature: | -- |
Vgs (Max): | +2V, -15V |
Gate Charge (Qg) (Max) @ Vgs: | 5.45nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.6A (Ta) |
Drain to Source Voltage (Vdss): | 15V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TPS1100DR is a high-end power MOSFET from Texas Instruments. It has a wide range of applications due to its low-voltage, high-current design. The MOSFET can be used in a variety of mobile, consumer electronics and automotive applications.
The TPS1100DR is a depletion-mode N-channel Power MOSFET designed for use in high current, low-voltage applications. It has a breakdown voltage of 6V, a drain current of up to 11A, and an on-resistance of only 1.1mΩ. The TPS1100DR is designed to reduce switching loss and provide excellent switching characteristics.
It has an on-resistance that varies inversely with the drain current, increasing its efficiency. The device also has a low input capacitance, making it very suitable for high-speed switching applications. Additionally, its body diode can handle high surge currents, allowing it to be used in harsh environments.
The TPS1100DR works by allowing a small current to flow through the MOSFET when no drain voltage is applied. This small current is known as the “gate threshold voltage”. When the drain voltage is increased, the small current increases and the MOSFET begins conducting.
The MOSFET can be turned off or on by controlling the small current. To turn it off, the small current must be reduced to a level that the MOSFET cannot conduct. To turn it on, the current must be increased.
The TPS1100DR is an ideal device for applications where a low on-resistance and low gate threshold voltage are needed. It can be used in automotive and high-end consumer electronics applications that require high current, low voltage operation. It is used in applications such as motor drive circuits, solar inverters, portable electronics, switching power supplies, and more.
The TPS1100DR MOSFET is a useful tool for high current, low voltage applications and can be used in a variety of mobile, consumer electronics and automotive applications. Due to its low on-resistance and gate threshold voltage it is well suited for high-speed switching applications. Thanks to its body diode, it can also handle high surge currents, making it well suited for harsh environments.
The specific data is subject to PDF, and the above content is for reference
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