Allicdata Part #: | TPS1100PW-ND |
Manufacturer Part#: |
TPS1100PW |
Price: | $ 0.78 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 15V 1.27A 8-TSSOP |
More Detail: | P-Channel 15V 1.27A (Ta) 504mW (Ta) Surface Mount ... |
DataSheet: | TPS1100PW Datasheet/PDF |
Quantity: | 1000 |
600 +: | $ 0.69733 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-TSSOP (0.173", 4.40mm Width) |
Supplier Device Package: | 8-TSSOP |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 504mW (Ta) |
FET Feature: | -- |
Vgs (Max): | +2V, -15V |
Gate Charge (Qg) (Max) @ Vgs: | 5.45nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 180 mOhm @ 1.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 1.27A (Ta) |
Drain to Source Voltage (Vdss): | 15V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TPS1100PW is a silicon MOS FET in a TO-220AB package, a 3-pin device suitable for switching applications. This type of FET uses a gate oxide layer as a semiconductor for voltage-controlled current conduction, and also has a higher switching speed than bipolar transistors. In order to make use of these advantages in switching applications, it is necessary to understand the TPS1100PW\'s application field and working principle.
Firstly, the TPS1100PW is mainly used in buck converters and DC-DC converters. In a buck converter, the voltages of the two pulsatile power sources are relatively constant, while the output voltage is being adjusted. The P-channel MOSFET is usually used as the switching element in the buck converter, and the TPS1100PW is one such example. In a DC-DC converter, the MOSFET is used as the switching element, and the TPS1100PW is also suitable for this application. Both of these uses involve turning on and off the high current circuit to achieve voltage regulation. In this way, the TPS1100PW can be used in various high current switching applications.
Next, the working principle of the TPS1100PW is based on the electrical properties of the MOSFET. MOSFETs are made up of four components: a gate electrode, a gate oxide layer, a substrate, and a drain drain junction. When a positive voltage is applied to the gate electrode, electrons flow through the gate oxide layer to the substrate, creating a thin negative charge layer on the substrate. This negative layer of electrons at the substrate enables the flow of current from the Source to the Drain. If the voltage is decreased, the electrons do not have enough energy to pass through the gate oxide layer, so the current is cut off. As such, the TPS1100PW can turn charge on and off with a voltage change at the gate electrode, allowing for a high current switching capability.
Another important advantage of the TPS1100PW is its high switching speed and low voltage drop. MOSFETs can achieve a much faster switching speed than traditional bipolar transistors, which allows them to be used in high-frequency applications such as motor control, audio amplifiers, and high-speed communication systems. Similarly, since the voltage drop across the MOSFET is much lower than a bipolar transistor, the power loss is also lower, resulting in improved efficiency and reliability.
In conclusion, the TPS1100PW is an effective single-channel MOSFET suitable for high current switching applications. With its high switching speed and low voltage drop, the TPS1100PW is ideal for use in buck converters, DC-DC converters, motor control, audio amplifiers, and high-speed communication systems. Its working principle is based on the electrical properties of the MOSFET, and this makes it an effective choice for any application where high current switching is required.
The specific data is subject to PDF, and the above content is for reference
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