Allicdata Part #: | TPS1101DG4-ND |
Manufacturer Part#: |
TPS1101DG4 |
Price: | $ 1.33 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Texas Instruments |
Short Description: | MOSFET P-CH 15V 2.3A 8-SOIC |
More Detail: | P-Channel 15V 2.3A (Ta) 791mW (Ta) Surface Mount 8... |
DataSheet: | TPS1101DG4 Datasheet/PDF |
Quantity: | 1000 |
375 +: | $ 1.19542 |
Vgs(th) (Max) @ Id: | 1.5V @ 250µA |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Power Dissipation (Max): | 791mW (Ta) |
FET Feature: | -- |
Vgs (Max): | +2V, -15V |
Gate Charge (Qg) (Max) @ Vgs: | 11.25nC @ 10V |
Series: | -- |
Rds On (Max) @ Id, Vgs: | 90 mOhm @ 2.5A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 2.7V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 2.3A (Ta) |
Drain to Source Voltage (Vdss): | 15V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tube |
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The TPS1101DG4 is a dual-gate MOSFET (metal-oxide semiconductor field-effect transistor) manufactured by Texas Instruments (TI) and designed for low-power mobile, portable and automotive applications. The TPS1101DG4 is optimized for use in low VDS (drain-source voltage) switching applications, making it ideal for a variety of designs and unique power requirements.
The TPS1101DG4 is a n-channel enhancement-mode dual-gate MOSFET with a maximum drain current of 138mA and a breakdown voltage of 8V. Operating at a temperature between -40°C to +125°C, the MOSFET uses an industry-standard 3-pin surface-mount package measuring 1.7mm x 1.3mm and is rated for a maximum power dissipation of 90mW. Its low-on-resistance ensures fast switching, while its low gate charge ensures minimum power dissipation when driving hot switches.
The dual-gate design of the TPS1101DG4 provides two benefits. Firstly, it provides a higher degree of accuracy in signal control by allowing both gates to be independently biased, thereby improving the linearity and signal-to-noise ratio of circuits. Secondly, it also helps reduce switching time by allowing both gates to be fired at the same time.
The unique feature of the TPS1101DG4 is its low power consumption. Unlike traditional MOSFETs, which draw significant amounts of power at low gate voltages and currents, the TPS1101DG4 is designed to minimize power consumption when driving on/off switches in low VDS applications. This is accomplished through a combination of a dual-gate design, lower internal capacitance and lower input gate resistance.
The TPS1101DG4 is well-suited to applications that require low power consumption and fast switching. High-frequency switching is possible thanks to the dual-gate design, while low VDS applications are made more efficient thanks to the low power consumption. Additionally, the device’s small size and low profile make it easy to use in tight spaces and narrow PCBs. Common applications for the TPS1101DG4 include switching power supplies, DC-DC converters and battery monitoring systems.
In conclusion, the TPS1101DG4 is an ideal solution for low VDS switching applications in which fast switching and low power consumption are priorities. Its dual-gate design provides greater signal control and faster switching time, while its small size and low power consumption make it ideal for a variety of unique designs. The TPS1101DG4 is a great choice for battery monitoring systems, switching power supplies and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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