TPS1101DRG4 Discrete Semiconductor Products

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The TPS1101DRG4 is an advanced power MOSFET designed to provide improved performance and superior robustness in applications requiring single sub-threshold operation, such as portable power, switch-mode power supply cooling systems, and automotive systems. This device features an extremely low forward on-resistance and a maximum withstand voltage of 62V. This power MOSFET is housed in a 4-pin SOT-223 package and is capable of continuous drain current up to 50A, making it ideal for a variety of applications.

The TPS1101DRG4 uses R-DS(on) or on-resistance to measure the device\'s maximum current flowing through its drain and source. This resistance value is a measure of how much power the device will dissipate, and the lower the R-DS(on) value, the lower the power dissipated. This device features an R-DS(on) of 0.6Ω, making it highly efficient in its ability to handle high current loads.

The working principle of the TPS1101DRG4 power MOSFET is based on a metal-oxide-semiconductor field-effect transistor (MOSFET). A MOSFET is a type of transistor that uses metal oxide as the gate material to control the electrical flow. The gate of the TPS1101DRG4 is a voltage-controlled device, and the gate voltage completes an electric field around the gate. This field control the conductivity between the drain and source contacts and can be used to either strengthen or weaken the electrical connection depending on the voltage applied to the gate.

The TPS1101DRG4 power MOSFET is optimized for single sub-threshold operation, as its R-DS(on) is low, enabling operation in a wide range of temperatures from -55°C up to 150°C. In single sub-threshold operation, the power MOSFET is able to output a smooth and steady current flow with an excellent noise immunity. This operation mode is ideal for use in portable applications such as laptop and notebook chargers, automotive systems, and power converters.

The TPS1101DRG4 is an excellent choice for applications that require high performance, low power consumption, and superior robustness. Its low R-DS(on) and wide temperature range make it ideal for a variety of electronic applications. This power MOSFET is capable of handling high current loads while requiring minimal effort to maintain, making it a great choice for design engineers.

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