TPS1101D Allicdata Electronics
Allicdata Part #:

296-3381-5-ND

Manufacturer Part#:

TPS1101D

Price: $ 2.04
Product Category:

Discrete Semiconductor Products

Manufacturer: Texas Instruments
Short Description: MOSFET P-CH 15V 2.3A 8-SOIC
More Detail: P-Channel 15V 2.3A (Ta) 791mW (Ta) Surface Mount 8...
DataSheet: TPS1101D datasheetTPS1101D Datasheet/PDF
Quantity: 3046
1 +: $ 1.85220
10 +: $ 1.67391
100 +: $ 1.34486
500 +: $ 1.04600
1000 +: $ 0.86668
Stock 3046Can Ship Immediately
$ 2.04
Specifications
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Power Dissipation (Max): 791mW (Ta)
FET Feature: --
Vgs (Max): +2V, -15V
Gate Charge (Qg) (Max) @ Vgs: 11.25nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 90 mOhm @ 2.5A, 10V
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 10V
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Drain to Source Voltage (Vdss): 15V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tube 
Description

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TPS1101D is a depletion-mode, complementary MOS (CMOS) field-effect transistor (FET), manufactured by Texas Instruments. It was designed to perform a wide range of functions, such as high-speed switching, voltage level shifting, and voltage control. It is a popular choice for a variety of applications, including analog-to-digital and digital-to-analog conversion, power conversion, and signal conditioning.

The TPS1101D consists of two transistors—a p-channel device and an n-channel device—packaged in a small, low-profile surface-mount package. It features a wide operating voltage range of 1.8V to 5.5V, making it suitable for use in a variety of applications. The TPS1101D also has a low on-resistance of 0.65 Ω. With an input capacitance of 7.7 pF and output capacitance of 4.6 pF, it offers excellent performance in high-frequency applications. The TPS1101D is rated for a wide temperature range of -40°C to +85°C.

The working principle of the TPS1101D is similar to that of other FETs. It is composed of two channels, the p-channel and the n-channel, which are connected in an opposition to each other. When the gate of the FET is triggered, charge carriers flow through the channel, creating an electrical current. The source and drain are the two terminals of the FET, with the source being the positive side and the drain the negative. The gate of the FET is responsible for controlling the flow of charge carriers.

The TPS1101D is ideal for a variety of applications, including signal conditioning, power supply regulation, audio circuits, high frequency switching, automotive electronic systems, and battery-powered systems. Its small footprint and low on-resistance make it an excellent choice for applications where board space is at a premium. Its wide operating voltage range and temperature range also make it suitable for a wide range of environments.

The TPS1101D is a versatile, efficient, and reliable CMOS FET that can be used in a variety of applications. Its low on-resistance, small footprint, and wide operating voltage and temperature ranges make it an ideal choice for high-speed switching, voltage regulation, and signal conditioning applications.

The specific data is subject to PDF, and the above content is for reference

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