TSM1NB60CH C5G

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The TSM1NB60CH C5G is part of the TS Series Power MOSFET from ON Semiconductor. It is a N-channel enhancement mode field-effect transistor designed for low voltage, high speed switching applications. The TSM1NB60CH C5G features a low on-resistance and a high-current capability, combined with fast switching speeds with low gate charge. All these features make it perfect for power management applications.

The TSM1NB60CH C5G MOSFET is typically applied in the following power management applications: motor control, digital power control, power supply applications, high frequency switching applications, automotive, consumer electronics, industrial applications, computer and telecom power supplies, UPS systems and motor drive circuits.

The TSM1NB60CH C5G consists of a three-terminal N-Channel MOSFET constructed as a metal oxide semiconductor. The metal oxide moat surround the MOSFET terminates the external gate oxide layer and serves as an integral insulator for the external gate to body junction. The MOSFET utilizes a high-speed standard logic level gate, which makes it well suited for low voltage and high frequency switching applications.

Working Principle: The TSM1NB60CH C5G operates as a voltage controlled device. When a voltage is applied at the gate terminal, it triggers an electrostatic attraction and electron flow from the source of the MOSFET to the drain. This creates an Electron Flow (EF) across the channels between the source and the drain. The amount of current flow is dependant on the amount of resistance between the source and the drain. The resistance between the source and the drain is controlled by the voltage at the gate. As more voltage is applied, the less resistance is found and thus more current will flow between the source and the drain.

The TSM1NB60CH C5G is an ideal device for synchronous rectification, motor control, switch mode power supplies, digital power control, and high frequency switching applications due to its voltage controlled resistance and fast switching speed with low gate charge. The low on-resistance and high-current capability make it perfect for power management applications demanding high-current carrying capabilities.

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