| Allicdata Part #: | TSM170N06CHC5G-ND |
| Manufacturer Part#: |
TSM170N06CH C5G |
| Price: | $ 0.67 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Taiwan Semiconductor Corporation |
| Short Description: | MOSFET N-CHANNEL 60V 38A TO251 |
| More Detail: | N-Channel 60V 38A (Tc) 46W (Tc) Through Hole TO-25... |
| DataSheet: | TSM170N06CH C5G Datasheet/PDF |
| Quantity: | 651 |
| 1 +: | $ 0.61110 |
| 10 +: | $ 0.53613 |
| 100 +: | $ 0.41366 |
| 500 +: | $ 0.30643 |
| 1000 +: | $ 0.24515 |
| Vgs(th) (Max) @ Id: | 2.5V @ 250µA |
| Package / Case: | TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package: | TO-251 (IPAK) |
| Mounting Type: | Through Hole |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max): | 46W (Tc) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 900pF @ 25V |
| Vgs (Max): | ±20V |
| Gate Charge (Qg) (Max) @ Vgs: | 28.5nC @ 10V |
| Series: | -- |
| Rds On (Max) @ Id, Vgs: | 17 mOhm @ 20A, 10V |
| Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C: | 38A (Tc) |
| Drain to Source Voltage (Vdss): | 60V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tube |
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TSM170N06CH C5G is a type of Trench MOSFET device by N-channel mode. This type of MOSFET is normally used as a switch since it has a very low on-state resistance along with its very high current carrying capacity. It covers power devices ranging from high-speed switching, motion control, voltage conversion, DC-DC as well as AC-DC Applications.
The TSM170N06CH C5G is constructed using an N-type MOSFET, which is a 3-terminal field-effect transistor that consists of a source, a gate, and a drain. It has a high-performance trench structure and is capable of providing very high-speed switching performance. In addition, the device utilizes a termination technology called charge-neutralization, which eliminates drain-induced parasitic capacitance for excellent switching speed.
This type of MOSFET is controlled by a gate voltage, which allows a current to flow from the source to the drain. When the gate voltage is off, the switch is in the off-state and no current flows through the device. When the gate voltage is turned on, the switch is in the on-state and a current will flow from the source to the drain. The gate voltage is typically controlled by a microcontroller, which allows the user to precisely control the switch\'s on-off state. This makes the TSM170N06CH C5G well-suited for high-speed applications, such as motion control and voltage conversion.
The TSM170N06CH C5G can also be used in DC-DC applications, such as power conversion. This is because it is capable of providing very high efficiency due to its low on-state resistance and its ability to switch rapidly. In addition, the device is capable of withstanding high voltages and is built using a high-quality insulating layer for longer life and reliability.
The TSM170N06CH C5G is also suitable for AC-DC applications because of its high current carrying capacity and its fast switching speed. It can be used as a switch for controlling the power supply of home appliances, such as air conditioners, refrigerators, and washing machines. In addition, the device is highly resistant to temperature changes and has a very low turn-on time.
In conclusion, the TSM170N06CH C5G is a type of Trench MOSFET device which is used for high-speed applications, such as motion control and voltage conversion. It is controlled by an external gate voltage and has a very low on-state resistance along with its high current carrying capacity. The device is also suitable for DC-DC and AC-DC applications and can be used to control power supplies for home appliances.
The specific data is subject to PDF, and the above content is for reference
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TSM170N06CH C5G Datasheet/PDF