TSM170N06CH C5G Allicdata Electronics
Allicdata Part #:

TSM170N06CHC5G-ND

Manufacturer Part#:

TSM170N06CH C5G

Price: $ 0.67
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET N-CHANNEL 60V 38A TO251
More Detail: N-Channel 60V 38A (Tc) 46W (Tc) Through Hole TO-25...
DataSheet: TSM170N06CH C5G datasheetTSM170N06CH C5G Datasheet/PDF
Quantity: 651
1 +: $ 0.61110
10 +: $ 0.53613
100 +: $ 0.41366
500 +: $ 0.30643
1000 +: $ 0.24515
Stock 651Can Ship Immediately
$ 0.67
Specifications
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package: TO-251 (IPAK)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Power Dissipation (Max): 46W (Tc)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 25V
Vgs (Max): ±20V
Gate Charge (Qg) (Max) @ Vgs: 28.5nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 17 mOhm @ 20A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Drain to Source Voltage (Vdss): 60V
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Part Status: Active
Packaging: Tube 
Description

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TSM170N06CH C5G is a type of Trench MOSFET device by N-channel mode. This type of MOSFET is normally used as a switch since it has a very low on-state resistance along with its very high current carrying capacity. It covers power devices ranging from high-speed switching, motion control, voltage conversion, DC-DC as well as AC-DC Applications.

The TSM170N06CH C5G is constructed using an N-type MOSFET, which is a 3-terminal field-effect transistor that consists of a source, a gate, and a drain. It has a high-performance trench structure and is capable of providing very high-speed switching performance. In addition, the device utilizes a termination technology called charge-neutralization, which eliminates drain-induced parasitic capacitance for excellent switching speed.

This type of MOSFET is controlled by a gate voltage, which allows a current to flow from the source to the drain. When the gate voltage is off, the switch is in the off-state and no current flows through the device. When the gate voltage is turned on, the switch is in the on-state and a current will flow from the source to the drain. The gate voltage is typically controlled by a microcontroller, which allows the user to precisely control the switch\'s on-off state. This makes the TSM170N06CH C5G well-suited for high-speed applications, such as motion control and voltage conversion.

The TSM170N06CH C5G can also be used in DC-DC applications, such as power conversion. This is because it is capable of providing very high efficiency due to its low on-state resistance and its ability to switch rapidly. In addition, the device is capable of withstanding high voltages and is built using a high-quality insulating layer for longer life and reliability.

The TSM170N06CH C5G is also suitable for AC-DC applications because of its high current carrying capacity and its fast switching speed. It can be used as a switch for controlling the power supply of home appliances, such as air conditioners, refrigerators, and washing machines. In addition, the device is highly resistant to temperature changes and has a very low turn-on time.

In conclusion, the TSM170N06CH C5G is a type of Trench MOSFET device which is used for high-speed applications, such as motion control and voltage conversion. It is controlled by an external gate voltage and has a very low on-state resistance along with its high current carrying capacity. The device is also suitable for DC-DC and AC-DC applications and can be used to control power supplies for home appliances.

The specific data is subject to PDF, and the above content is for reference

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