TSM10NC60CF C0G

Series:	--
Packaging:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600V
Current - Continuous Drain (Id) @ 25°C:	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	750 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id:	4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	33nC @ 10V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	1652pF @ 50V
FET Feature:	--
Power Dissipation (Max):	45W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	ITO-220S
Package / Case:	TO-220-3 Full Pack

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Introduction to the TSM 10NC60CF C0G application field and working principle

The TSM 10NC60CF C0G is a field effect transistor (FET), more specifically a metal-oxide-semiconductor FET (MOSFET). It is a single FET, meaning it has a single gate, as opposed to dual FETs, which have two. A MOSFET is typically used as an electronic switch. The MOSFET is a four-terminal device that can serve as a variable capacitor, with the gate terminal being used to control the potential between the source and drain.

Use Cases for the TSM 10NC60CF C0G

The TSM 10NC60CF C0G is best suited for general purpose switching, switching in medium power applications, and power amplification in high power applications. It can be used as a digital switch to turn power to a device on and off, in light dimming applications, as part of an inverter system, and in audio amplifier designs.

Benefits of the TSM 10NC60CF C0G

The TSM 10NC60CF C0G has numerous benefits. It has a lower on-resistance than many other MOSFETs, meaning it is more efficient in converting energy from electric power. It also has a low gate-source threshold voltage, allowing it to be used in low voltage applications. The TSM 10NC60CF C0G can handle large amounts of power and its high switching speed makes it an ideal choice for high frequency switching applications.

Working Principle of the TSM 10NC60CF C0G

The working principle of the TSM 10NC60CF C0G revolves around the fact that it is a field effect transistor. The FET works by establishing an electric field between the gate and the source and drain. This electric field then influences the conductivity of the channel between the source and drain. When an electrical signal is applied to the gate, the electric field is modified, which affects the conductivity of the source and drain. The more signal applied to the gate, the more conductive the source and drain become. When the TSM 10NC60CF C0G is turned on, the electric field between the gate and the source and drain increases, allowing current to flow. Similarly, when the device is turned off, the electric field is reduced, preventing current from flowing. The reason for this is that the electric field works to repel or attract electrons in the channel, thus controlling the flow of current.

Conclusion

The TSM 10NC60CF C0G is a single FET, more specifically a metal-oxide-semiconductor FET (MOSFET), used primarily for general purpose switching, power amplification, and in light dimming applications. The advantages of using this device are its low on-resistance, low gate-source threshold voltage, high power handling capabilities, and fast switching speed. The principle behind its operation revolves around the formation of an electric field between the gate, source and drain, resulting in the control of the current flowing between these terminals.

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