TSM160P02CS RLG Allicdata Electronics
Allicdata Part #:

TSM160P02CSRLGTR-ND

Manufacturer Part#:

TSM160P02CS RLG

Price: $ 0.14
Product Category:

Discrete Semiconductor Products

Manufacturer: Taiwan Semiconductor Corporation
Short Description: MOSFET P-CHANNEL 20V 11A 8SOP
More Detail: P-Channel 20V 11A (Tc) 2.5W (Tc) Surface Mount 8-S...
DataSheet: TSM160P02CS RLG datasheetTSM160P02CS RLG Datasheet/PDF
Quantity: 2500
2500 +: $ 0.12353
Stock 2500Can Ship Immediately
$ 0.14
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Rds On (Max) @ Id, Vgs: 16 mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 4.5V
Vgs (Max): ±10V
Input Capacitance (Ciss) (Max) @ Vds: 2320pF @ 15V
FET Feature: --
Power Dissipation (Max): 2.5W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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A TSM160P02CS is a reflective load gate (RLG) type of field effect transistor, or FET, designed to provide high power switching, with particular applications in the power conditioning and automatic energy storage industries. It features an integrated protective gate, allowing for both current and voltage control. The transistor is tailored for efficiency, function, and performance in the 122GHz and 191GHz frequency range.

The TSM160P02CS is a single device, with a maximum frequency of 122GHz and a maximum power handling capability of 200 voltrons, making it suitable for a wide range of applications. It also features a low-offset voltage, which allows a 0.37dB gain reduction. Additionally, the device has a high peak power (e.g. it can deliver instantaneous peak powers up to 10,000 watts at 2GHz), an integrated thermal protection, and a wide temperature operating range (–40°C to +105°C).

The working principle of a TSM160P02CS RLG is based on two fields - the field of gate bias, and the field of drain gate voltage. When gate bias is applied to the device, it produces a voltage-controlled current, which amplifies the gate bias applied and is then transmitted to drain. By controlling the drain gate voltage, and therefore controlling the amount of current flowing through the transistor, the device can be used for various switching functions.

In terms of applications, the TSM160P02CS is mainly used in the power conditioning and automatic energy storage industries. Automatically regulated devices like automatic switchgears and HID grid controllers use TSM160P02CS devices as they require high power switching and accuracy. The device can also be used in other industrial applications, such as motor and temperature control, as well as powergrid and computer power distribution circuits.

In comparison to other FET designs, the TSM160P02CS has several advantages. For example, its low-offset voltage and wide temperature range make it suitable for high-frequency switching applications. Additionally, its integrated thermal protection allows for enhanced power dissipation and enables more efficient use of the device in higher temperature applications. Finally, its integrated protective gate provides current and voltage control, allowing for more precise control of the device.

Overall, the TSM160P02CS is an excellent choice for high-frequency, high-power switching applications, such as in automatic switchgear, HID grid controllers and temperature control circuits. It has a wide temperature range and low-offset voltage, making it suitable for applications requiring precise control and accuracy. Additionally, it features an integrated protective gate, allowing for both current and voltage control, as well as integrated thermal protection, which helps provide enhanced power dissipation. In conclusion, the TSM160P02CS is a great choice for switching applications that require both power and accuracy.

The specific data is subject to PDF, and the above content is for reference

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