TSM10N80CI C0G

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The TSM10N80CI C0G is an advanced Revolution Pro 8MOS power MOSFET, with high input and output impedance and fast switching capability. It is part of the TSM family of devices, which includes a wide variety of power switching solutions. This device is designed to handle large power requirements at high operating frequencies and low voltage drop. In this article, we will take a look at the TSM10N80CI C0G application field and working principle.

Application Field

The TSM10N80CI C0G is a general purpose low frequency MOSFET for high power switching applications. This device is suited for applications such as DC-DC converters, UPS systems, battery chargers, high-efficiency switching power supplies, and motor speed control. It features low on-resistance, low input capacitance, and fast switching capabilities. Additionally, the TSM10N80CI C0G is built utilizing a step-reliability process, giving it excellent long-term reliability.

Working Principle

The TSM10N80CI C0G is a metal-oxide-semiconductor field-effect transistor (MOSFET). This type of transistor uses the majority carrier current effect to create a field-effect between the gate and the source. This field-effect is used to control the current passing through the device by controlling the drain-to-source voltage. The controlling of the current passing through the device is known as voltage-mode control. In MOSFETs, the current is mainly controlled by the gate-source capacitance and the channel length. The channel length is the physical length of the device and is determined by the fabrication process and the gate voltage.

The TSM10N80CI C0G has a source threshold voltage (VTH), which is the gate voltage required to turn the device on. This voltage is typically between 1.0 V and 2.0 V. As the gate voltage increases, the device will start to become resistive and the current passing through the device will increase exponentially. The higher the gate voltage, the lower the saturation voltage VDS (s) of the device. VDS (s) is the gate-source voltage required to saturate the device, meaning that the device is fully on. Typically, the VDS (s) of this device is between 1.0 V and 2.5 V.

The TSM10N80CI C0G is designed to operate with a high frequency operating range of up to 200 kHz. This high operating frequency allows for faster switching operations and lower voltage drops. Additionally, the device is designed with a high input capacitance, which means that the input power dissipated when switching the device is low. The high input impedance of the device also makes it suitable for use in high voltage switching applications.

In addition to its high speed and efficiency, the TSM10N80CI C0G also offers a low thermal resistance. This low thermal resistance allows for faster heatsinking and better heat dissipation. The device is also radiation resilient and can withstand harsh environments, making it suitable for use in space or military applications.

The TSM10N80CI C0G is a great choice for a wide variety of power switching applications. Its fast switching capabilities, low power consumption, low thermal resistance, and radiation resilience make it ideal for many high power applications. Its fast switching capabilities also make it ideal for DC-DC converters, UPS systems, battery chargers, and motor speed control, as well as many other applications.

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