UP0460100L Allicdata Electronics

UP0460100L Discrete Semiconductor Products

Allicdata Part #:

UP0460100LTR-ND

Manufacturer Part#:

UP0460100L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS NPN/PNP 50V 0.1A SSMINI6
More Detail: Bipolar (BJT) Transistor Array NPN, PNP 50V 100mA ...
DataSheet: UP0460100L datasheetUP0460100L Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN, PNP
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 10V / 180 @ 5mA, 10V
Power - Max: 125mW
Frequency - Transition: 150MHz, 80MHz
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1
Description

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Transistors - Bipolar (BJT) - Arrays

UP0460100L is an array of four bipolar junction transistors (BJTs) that is known for its accuracy, reliability, and dependability. The device is suitable for both analog and digital applications and its small size makes it suitable for space-limited applications.

The device has a gain bandwidth product of 10MHz, and a collector-base breakdown voltage of 150 volts. The BJT array contains four transistors, each with a common emitter, an emitter-base, an emitter-collector, and a collector-base. Each transistor has a short-circuit protection circuit and a low input current drive capability. The total power dissipation of the UP0460100L is 1 watt.

The UP0460100L offers a wide range of application implementations, such as instrumentation and control amplifiers, power output stages, and low-voltage op-amps. These devices can also be used for switching, linear, and low voltage applications. Some of the typical applications include power controllers, pulse-width modulation (PWM) converters, motor control circuits, and regulated power supplies.

The working principle of the UP0460100L is the amplification or switching of currents or signals. It amplifies the input signal, either by increasing its current or voltage, and gives out a larger output. The BJTs are configured in an array, with each transistor acting as an individual amplifier, or as a switching device. This makes it possible to switch multiple signals or currents simultaneously, and to do so with very low loss.

The BJT array works by using affected thermionic emission, which is a process by which electrons move between two separate plates, with one plate acting as an anode and the other acting as a cathode. When a current is passed through the anode, electrons are pulled away from it and pushed toward the adjacent cathode plate. This forms a net current between the plates and triggers the BJTs to switch between their on and off states. This switching action amplifies or changes the input signal.

The UP0460100L is an excellent choice for both general-purpose and precision applications. It is ideal for power output stages, control amplifiers, and low voltage op-amps. Its core architecture and high performance parameters make it a great choice for applications requiring high power and accuracy.

The specific data is subject to PDF, and the above content is for reference

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