UP0460100L Discrete Semiconductor Products |
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Allicdata Part #: | UP0460100LTR-ND |
Manufacturer Part#: |
UP0460100L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS NPN/PNP 50V 0.1A SSMINI6 |
More Detail: | Bipolar (BJT) Transistor Array NPN, PNP 50V 100mA ... |
DataSheet: | UP0460100L Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | NPN, PNP |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 10mA, 100mA / 500mV @ 10mA, 100mA |
Current - Collector Cutoff (Max): | 100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 180 @ 2mA, 10V / 180 @ 5mA, 10V |
Power - Max: | 125mW |
Frequency - Transition: | 150MHz, 80MHz |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SSMINI6-F1 |
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Transistors - Bipolar (BJT) - Arrays
UP0460100L is an array of four bipolar junction transistors (BJTs) that is known for its accuracy, reliability, and dependability. The device is suitable for both analog and digital applications and its small size makes it suitable for space-limited applications.
The device has a gain bandwidth product of 10MHz, and a collector-base breakdown voltage of 150 volts. The BJT array contains four transistors, each with a common emitter, an emitter-base, an emitter-collector, and a collector-base. Each transistor has a short-circuit protection circuit and a low input current drive capability. The total power dissipation of the UP0460100L is 1 watt.
The UP0460100L offers a wide range of application implementations, such as instrumentation and control amplifiers, power output stages, and low-voltage op-amps. These devices can also be used for switching, linear, and low voltage applications. Some of the typical applications include power controllers, pulse-width modulation (PWM) converters, motor control circuits, and regulated power supplies.
The working principle of the UP0460100L is the amplification or switching of currents or signals. It amplifies the input signal, either by increasing its current or voltage, and gives out a larger output. The BJTs are configured in an array, with each transistor acting as an individual amplifier, or as a switching device. This makes it possible to switch multiple signals or currents simultaneously, and to do so with very low loss.
The BJT array works by using affected thermionic emission, which is a process by which electrons move between two separate plates, with one plate acting as an anode and the other acting as a cathode. When a current is passed through the anode, electrons are pulled away from it and pushed toward the adjacent cathode plate. This forms a net current between the plates and triggers the BJTs to switch between their on and off states. This switching action amplifies or changes the input signal.
The UP0460100L is an excellent choice for both general-purpose and precision applications. It is ideal for power output stages, control amplifiers, and low voltage op-amps. Its core architecture and high performance parameters make it a great choice for applications requiring high power and accuracy.
The specific data is subject to PDF, and the above content is for reference
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