UP0439000L Allicdata Electronics

UP0439000L Discrete Semiconductor Products

Allicdata Part #:

UP0439000LTR-ND

Manufacturer Part#:

UP0439000L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS NPN/PNP SSMINI6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: UP0439000L datasheetUP0439000L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms, 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz, 80MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1
Description

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The UP0439000L device is classified as a pre-biased bipolar (BJT) array and operates using the base-emitter junctions of each transistor. It has a wide array of applications in a variety of fields, and its working principle is based on using the variable resistance between each base-emitter junction. The UP0439000L works in two different ways; firstly, it functions as a simple two-stage voltage amplifier and secondarily as a high-voltage regulator.

In simple two-stage voltage amplification, the UP0439000L utilizes the variable resistance of the base-emitter junctions of the transistors to provide a high degree of gain. The base of the transistors is connected to the input voltage, and the output is connected to the collector of the last transistor. When a voltage is applied to the base, the resistance of the transistor varies accordingly and the collector current increases. This current is further amplified by the second transistor, resulting in a high degree of amplification. The exact degree of amplification depends upon the gain-bandwidth product of the transistors.

The UP0439000L also provides functions as a high-voltage regulator. By using the same transistor array and utilizing the base-emitter junctions of each transistor, the UP0439000L can be used to regulate the output voltage. This is accomplished by connecting the input voltage source to the base of the first transistor and the output voltage is connected to the collector of the last transistor. As the input voltage rises, the resistance of the base-emitter junctions increase, resulting in a decrease of the collector current and an eventual drop in the output voltage. Through proper design, this system can maintain the output voltage at a pre-defined level.

The UP0439000L is a versatile pre-biased bipolar (BJT) array application that can enable a wide array of applications. The device is well-fitted for applications like constant current sources, level shifters, DC-DC converters, and power management MCUs. The versatility and versatility of the UP0439000L makes it an ideal choice for a variety of projects, from small automotive projects to large commercial applications.

The UP0439000L is designed with a wide array of applications in mind and its working principle is based on the variable resistance of its base-emitter junctions. This device works as a two-stage voltage amplifier and as a high-voltage regulator, making it suitable for a variety of projects. Furthermore, its versatility makes it an ideal choice for a variety of projects, ranging from automotive applications to large commercial applications. Therefore, the UP0439000L is a great device for any project that requires reliable amplification and regulation of voltages.

The specific data is subject to PDF, and the above content is for reference

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