UP04215G0L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Transistor Type:	2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	--
DC Current Gain (hFE) (Min) @ Ic, Vce:	160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	--
Frequency - Transition:	150MHz
Power - Max:	125mW
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SSMini6-F2

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

UP04215G0L is a pre-biased array of transistors, specifically bipolar junction transistors (BJTs). It is designed to provide a low-power solution for many applications, including audio, power management, and signal processing. The device is composed of a number of BJTs arranged in an array, with individual BJTs connected together to share a common collector voltage. This arrangement allows each transistor to operate at a lower voltage than the supply voltage, reducing power consumption significantly.

Device Basics

The UP04215G0L is composed of a pre-biased array of BJTs, arranged in either a single row or a dual row configuration. The device is housed in a 20-pin package and provides a range of operating voltages up to 24V. Its maximum current rating is 5A, with a peak current rating of 7A. The device has an operating temperature range of -55°C to +125°C and offers a minimum of 1,000 thermal cycles.

Application Fields

The UP04215G0L is suited for a wide range of applications that require pre-biased BJT technology. These applications include audio applications, power management, and signal processing. In audio applications, it can be used to provide an input signal with bipolar correlation. In power management, it can be used for dc-dc conversion, voltage scaling, and load switching. In signal processing it can be used for low-noise amplification and signal buffering.

Working Principle

The UP04215G0L is a pre-biased BJT array. This means that all of the individual BJTs are connected together to share a common collector voltage. By connecting the individual BJTs together, the voltage across the entire array is significantly reduced, allowing the device to operate at lower voltages. This reduces the power consumption and heat generation of each of the individual BJTs in the array.When the device is active, current flows between the base and collector of an individual BJT, creating a voltage drop between the collector and the base of the device. This voltage drop is referred to as the collector-to-emitter voltage, or VCE. In order to minimize power consumption, the VCE voltage must be kept low.The UP04215G0L uses two transistors in a closed loop configuration to reduce the VCE voltage. In this configuration, one transistor is connected in a closed loop with the other via two resistors. This arrangement allows current to flow from the base to the collector of one transistor, through the resistors, and back to the base of the other transistor. The VCE voltage of the two transistors is equal and equal to the voltage of the resistors. By adjusting the resistors, the VCE voltage can be reduced, minimizing power consumption.

Conclusion

The UP04215G0L is a pre-biased array of transistors, specifically bipolar junction transistors (BJTs). It is designed to provide a low-power solution for many applications, including audio, power management, and signal processing. The device is composed of a number of BJTs arranged in an array, with individual BJTs connected together to share a common collector voltage. This arrangement allows each transistor to operate at a lower voltage than the supply voltage, reducing power consumption significantly. The UP04215G0L is suited for a wide range of applications that require pre-biased BJT technology. Its working principle is based on a closed loop configuration of two transistors, which reduces the collector-to-emitter voltage (VCE) and consequently reduces power consumption.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description