UP04113G0L Discrete Semiconductor Products

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The UP04113G0L is a P-channel, presliced MOSFET array, which includes 56 predefined MOS transistors in a single package, which provides an easier and faster alternative to traditional MOSFET array construction. This unique design enables the user to more quickly and easily construct high-speed, high-power MOSFET arrays. The UP04113G0L is ideal for applications that require high switching frequency and high performance.

The device is designed to provide maximum performance at a given voltage and power level. The UP04113G0L can be used in a wide variety of applications, including power management, signal conditioning and motor control. In addition, the UP04113G0L is suitable for circuit isolation and current sensing applications.

The UP04113G0L is constructed in a two-dimensional format, consisting of 7 rows and 8 columns of predefined MOSFETs. These MOSFETs are integrated similar to a standard planar MOSFET array and each device is connected with adjacent devices, allowing for simplified wiring and higher-speed performance than a standard planar MOSFET array. The UP04113G0L features a built-in gate bias generator which provides a stable and precise gate-drive signal.

The UP04113G0L also features a built-in current-limiting feature which protects the device against overcurrent and overvoltage conditions. This feature can be used to limit the current to a low level during start-up and shut-down periods, as well as during switch-on and switch-off operations. This feature is especially beneficial in power management applications.

The UP04113G0L is designed to operate in a wide range of temperature and power scenarios. It is rated at -55° C to 150° C with maximum ratings of 6 A (continuous current) and 175 V (maximum drain-source voltage). It is also rated for operation up to 3 GHz of ON/OFF switching frequency, which makes it suitable for fast-switching control circuits.

In terms of its working principle, the UP04113G0L is based on the standard structure of a P-channel MOSFET, which comprises two terminals (source and drain) and a gate. The UP04113G0L uses a built-in gate bias generator to provide a constant and predictable gate voltage, which reduces the need for external gate bias resistors. The device is also designed to provide fast switching speed and low on-resistance by utilizing a built-in charge pump circuit, which reduces resistance and increases switching speed.

Overall, the UP04113G0L is suitable for a wide range of applications, due to its high switching speed, low on-resistance, and wide operating temperature range. It is an ideal solution for power management, motor control and signal conditioning applications. The UP04113G0L is designed to be both cost effective and easy to use, making it an excellent choice for high-speed and high-power applications.

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