UP04314G0L Discrete Semiconductor Products |
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Allicdata Part #: | UP04314G0LTR-ND |
Manufacturer Part#: |
UP04314G0L |
Price: | $ 0.15 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN/PNP SSMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | UP04314G0L Datasheet/PDF |
Quantity: | 8000 |
8000 +: | $ 0.13103 |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz, 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SSMini6-F2 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
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The UP04314G0L is a pre-biased type of multipurpose two-stage Bipolar Junction Transistor (BJT) array designed to provide various applications in amplifiers and other high-frequency amplifier designs. It consists of complementary NPN and PNP transistors that are fabricated using a set of process techniques and standard semiconductor materials, allowing it to offer high-performance functionality and reliable switching capabilities.
The UP04314G0L was specifically designed to offer ratings up to +50V and a power dissipation rate of 8W rating. It offers excellent thermal performance in applications that demand thermal regulation and current flow control. These features allow it to be used in a wide variety of signal applications, from high frequency amplifiers to switched mode power supplies. These signal applications can include signal amplification, precision switching, and low current level signal conditioning.
The UP04314G0L utilizes a Bipolar Junction Transistor (BJT) arrangement, which allows it to be used in different ways. It is commonly used as a complementary pair of two transistors in an amplifier circuit, as well as in a cascode configuration with additional gain stages. It is also commonly used as a differential amplifier, enabling the user to measure and detect small electrical signals. In certain applications, such as in power amplifiers, the UP04314G0L can be used to control the power output of a Class-D amplifier.
The UP04314G0L utilizes a highly efficient and robust linear amplifier, allowing it to offer enhanced voltage and current control. This is achieved by the implementation of a high-input impedance, sufficient bias current and low-output impedance. The high-input impedance ensures maximum signal isolation from noise, while the low-output impedance ensures maximum stability and fidelity.
Due to the implementation of a pre-biased configuration, the UP04314G0L is able to achieve fast switching times. This is due to the rapid rise time of the collected charge and then its controlled decay. The pre-biased configuration allows the device to store and release a controlled amount of charge, allowing it to switch quickly and accurately.
The UP04314G0L offers excellent stability, reliability, and thermal performance in order to ensure successful operation. The linear amplifier allows the device to respond quickly to varying changes in applied voltage and current, reducing power fluctuations and improving the overall performance of the device. The device was designed to offer low noise generation, allowing it to meet the requirements of most high-frequency amplifier designs.
In conclusion, the UP04314G0L is designed to offer professional-level performance in signal and power amplifiers, as well as precision switching and low current signal conditioning. Its pre-biased configuration allows it to offer rapid switching times, while its high-input impedance, sufficient bias current and low-output impedance provides excellent stability, reliability, and thermal performance. This innovative device has a wide range of applications in modern amplifier designs, ensuring enhanced performance and reliability.
The specific data is subject to PDF, and the above content is for reference
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