UP0431400L Discrete Semiconductor Products |
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Allicdata Part #: | UP0431400LTR-ND |
Manufacturer Part#: |
UP0431400L |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Panasonic Electronic Components |
Short Description: | TRANS PREBIAS NPN/PNP SSMINI6 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -... |
DataSheet: | UP0431400L Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Transistor Type: | 1 NPN, 1 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic: | 250mV @ 300µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 150MHz, 80MHz |
Power - Max: | 125mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-563, SOT-666 |
Supplier Device Package: | SSMINI6-F1 |
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The UP0431400L is a powerful pre-biased bipolar transistor array designed to provide reliable switching applications. It features a low operating voltage, low on-state resistance, low off-state leakage current and an integrated input protection diode that makes it ideal for applications that require high speed and low power consumption. The UP0431400L is available in a package size of 6.9 x 6.4mm and has a on/off ratio of 7:1. This makes it an excellent choice for switching applications such as lighting, power electronics, household appliances, communications and automotive applications.
The UP0431400L employs a complementary construct with three independent PNP and three independent NPN transistors in a single package. The NPN devices are integrated with an input protection diode while the PNP transistor is biased at a pre-determined voltage, significantly reducing the complexity required to ensure correct switching performance. All the transistors can be used together as a single array or in combination with other components.
The UP0431400L\'s working principle can be easily understood. When the base of an NPN transistor is connected to the collector of a NPN transistor and the base of a PNP is connected to the collector of a PNP, the total current flowing through the device is determined by the difference between the collector-emitter voltage of the PNP and the base-emitter voltage of the NPN transistors. The difference between the two voltages determines the on/off state of the devices, thus providing the desired switching capability without the need for additional bias current.
The UP0431400L has a maximum collector current of 180mA and a maximum operating temperature of 85℃, with the optimal operating temperature range being from -40℃ to 125℃. It offers excellent transient response times, with a switching time of typically 1-10µs for NPN and 5-20µs for PNP, as well as low power consumption and high reliability. Additionally, its integrated ESD protection feature allows the device to operate safely in both residential and industrial environments.
Overall, the UP0431400L is an ideal choice for applications requiring a low on-state resistance, low off-state leakage current, and high speed switching capabilities. Its integrated protection diode, and pre-biased design also makes it a more reliable and cost effective solution compared to other transistor arrays.
The specific data is subject to PDF, and the above content is for reference
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