UP0487800L Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	50V
Current - Continuous Drain (Id) @ 25°C:	100mA
Rds On (Max) @ Id, Vgs:	12 Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id:	1.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs:	--
Input Capacitance (Ciss) (Max) @ Vds:	12pF @ 3V
Power - Max:	125mW
Operating Temperature:	125°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	SOT-563, SOT-666
Supplier Device Package:	SSMINI6-F1

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UP0487800L is an array technology contained four N-channel enhancement mode power field effect transistors. It has a built-in transfer gate, which enables it to be connected directly to an input through a CMOS level shifter. This power field effect transistor array can operate for both low-side and high-side output drive, which is mainly used for H-bridge driver circuits.ApplicationsUP0487800L is mainly used for high-performance H-bridge driver circuits with low RDS(on), and it is especially suitable for driving power capacitive loads and solenoid coils. This transistor array can also be used for voltage and current regulation in automotive and industrial applications.Working PrincipleUP0487800L works in two configurations: high-side or low-side outputs. In both cases, the power Mosfet transistors are connected in a driver-output arrangement, with each transistor connected to its respective driver and output.In a high-side configuration, the upper power Mosfet is used as the gate drive and the lower one is used as the output. In the low-side configuration, the upper power Mosfet is used as the gate drive and the lower one is used as the output. The gate drive provided by the array is powerful enough to drive both transistors independently.The gate drive provides the necessary voltage to turn the power transistors on/off and regulate the current flow. When a high voltage is applied to the gate terminal, the power Mosfet transistors will be turned on and current will flow from the gate. When the gate voltage is reduced, the power Mosfet transistors will be turned off, and current will be stopped from flowing.The power Mosfet transistors of the UP0487800L can be connected to different control inputs such as digital, analog or PWM signal. The level shifting circuit allows the array to work with different voltage levels. The voltage can range from 5V to 15V, allowing it to work with any standard supply voltage. Additionally, it can also work with an external MOSFET driver as well.ConclusionUP0487800L is a power Mosfet array used to drive high-side and low-side outputs. It can be used in a wide range of applications, such as motor control, voltage, and current regulation. The array contains four N-channel enhancement mode power field effect transistors, and it offers a powerful gate drive with excellent current flow control. The array can be connected to different control inputs such as digital, analog or PWM signal, and it has a built-in level shifter that makes it capable of working with different voltage levels from 5V to 15V.

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