UP0421000L Allicdata Electronics

UP0421000L Discrete Semiconductor Products

Allicdata Part #:

UP0421000LTR-ND

Manufacturer Part#:

UP0421000L

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Panasonic Electronic Components
Short Description: TRANS PREBIAS DUAL NPN SSMINI6
More Detail: Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Bi...
DataSheet: UP0421000L datasheetUP0421000L Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: 2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 47 kOhms
Resistor - Emitter Base (R2): --
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 150MHz
Power - Max: 125mW
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SSMINI6-F1
Description

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The UP0421000L is a pre-biased series of high-speed, high-power Darlington transistors. This device is intended to control high-power applications such as pulse-width modulation (PWM) motor drives, LED lighting, and other high-current conditions. In terms of application fields, the UP0421000L can be applied for driving power MOSFETs, high-voltage DC motor drives, and power converter systems, as well as for general-purpose use.

The UP0421000L is an NPN array of eight transistors with one common emitter that can handle applications with large power demand up to 40 watts. It has a maximum DC gain of 500 with a range of 10-12 in the collector-base current of the device. The UP0421000L can handle a maximum collector current of 12 A and a maximum collector-emitter voltage of 60 V. Additionally, the UP0421000 has a very low saturation voltage of 0.18V and a very low noise figure of 2V (50 Hz-10 kHz).

The UP0421000L features high-speed performance, making it suitable for fast switching applications. It has a very low turn-on time of 1.5 ns and a minimum turn-off delay time of 6 ns. It also features a very low gate capacitance of 0.20pF, making it suitable for applications that require a high switching frequency. Additionally, it offers an extremely low propagation delay of 0.15ns, making it suitable for high-speed applications.

The UP0421000L also has embedded protections that prevent voltage spikes. These protections are provided by the use of Zener diodes, which limit the amount of voltage that can be applied across the transistors. Additionally, the device has an integrated temperature sensing and monitoring circuit which allows for safe use in harsh environments.

The UP0421000L is designed to work on a wide range of operating systems, from single, dual and multiple processors to device drivers. It is also designed to provide enhanced performance in embedded systems such as DC-to-DC converters, motor control systems and other low power applications. It has a low-power 1.2V supply voltage and a low-current 1 mA operating current.

The working principle behind the UP0421000L is based on the combination of a single-stage NPN Darlington transistor array and thermal protection. The device is pre-biased using the integrated Zener diodes and the thermal protection circuit. When the device is turned on, the base of the transistors are driven to the saturation region. This causes the output current to turn on and the voltage across the collector-emitter to decrease. The decreased voltage turns on the thermal protection circuit and allows for the UP0421000L to cool down. In addition, when the device is turn-off, the thermal protection circuit shuts off the device as well.

The UP0421000L is a great choice for applications that require high-speed, high-power performance and safe operation. Its pre-biased design, integrated protection and thermal protection circuit, and low-power operating supply make it an ideal fit for embedded systems and other high-current applications. Furthermore, its fast turn-on and turn-off times, low gate capacitance, and low propagation delay make it suitable for power converter systems and other high-speed applications.

The specific data is subject to PDF, and the above content is for reference

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