US1J-13-F Discrete Semiconductor Products |
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Allicdata Part #: | US1J-FDITR-ND |
Manufacturer Part#: |
US1J-13-F |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | DIODE GEN PURP 600V 1A SMA |
More Detail: | Diode Standard 600V 1A Surface Mount SMA |
DataSheet: | US1J-13-F Datasheet/PDF |
Quantity: | 90000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | SMA |
Operating Temperature - Junction: | -65°C ~ 150°C |
Base Part Number: | US1J |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are essential components found in a variety of electrical and electronic devices. Rectifiers are special types of diodes that convert alternating current (AC) to direct current (DC). A US1J-13-F rectifier is a single type of diode that offers several advantages, including high speed, low leakage, and very low forward voltage drop, making it a very popular choice for a variety of applications. This article will provide an overview of the application fields and working principles of the US1J-13-F rectifier.
The US1J-13-F rectifier is a high-speed silicon rectifier with a low reverse leakage current. It is composed of two p-n junctions. The junction is the area between two dissimilar semiconductor materials, where electrons are able to move from one material to the other. Because of its full recovery time of only 1ms, this type of rectifier is suitable for high frequency applications, such as general purpose rectification, DC-DC converters, PFC drivers, inrush current limiter, and others.
Since it offers a very low forward voltage drop, with a typical value of about 1.05V, this rectifier is especially suitable for energy-saving applications. It can handle currents up to 1A and has an average forward current of up to 1A. This rectifier is designed to have an operating temperature range between -55°C and +150°C, making it suitable for use in a wide variety of conditions.
The US1J-13-F rectifier functions by allowing a current to flow in one direction and blocking the flow of current in the opposite direction. In other words, the rectifier acts as a one-way valve that allows current to move in one direction only. This type of rectifier is known as a “steering diode”, because it prevents current from flowing in the wrong direction, just like a steering wheel keeps a car going in the right direction.
When the device is connected in the forward direction, its p-n junction acts as a low resistance path for the current, allowing it to flow freely. However, when reverse voltage is applied, the junction acts as a high resistance, blocking the current from moving in that direction. This mechanism prevents power loss and prolongs the device’s life by blocking the reverse current.
The US1J-13-F rectifier is commonly used in a variety of applications, such as in DC power supplies, DC motors, switch-mode power supplies, motor drives, and switching regulators. It is also used in audio amplifiers, switch-mode power converters, and in industrial equipment, such as food processing, medical equipment, and elevators.
In summary, the US1J-13-F rectifier is a single diode with excellent performance. Its main features are high speed, low leakage current, and a very low forward voltage drop. Its ability to block the flow of reverse current makes it ideal for energy-saving applications. It is a popular choice for a variety of applications, such as DC power supplies, DC motors, switch-mode power supplies, motor drives, and switching regulators.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1JHE3_A/H | Vishay Semic... | -- | 12600 | DIODE GEN PURP 600V 1A DO... |
US1JFA | ON Semicondu... | 0.08 $ | 30000 | DIODE GEN PURP 600V 1A SO... |
US1J R3G | Taiwan Semic... | 0.06 $ | 14400 | DIODE GEN PURP 600V 1A DO... |
US1J-TP | Micro Commer... | -- | 5000 | DIODE GEN PURP 600V 1A DO... |
US1JDF-13 | Diodes Incor... | 0.07 $ | 1000 | DIODE GEN PURPOSE 600V 1A... |
US1JE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
US1JFL-TP | Micro Commer... | 0.07 $ | 10000 | DIODE GEN PURP 600V 1A DO... |
US1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
US1J-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 600V 1A SM... |
US1J M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHR3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/61T | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A SM... |
US1J/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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