Allicdata Part #: | US1JHR3G-ND |
Manufacturer Part#: |
US1JHR3G |
Price: | $ 0.05 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1JHR3G Datasheet/PDF |
Quantity: | 1000 |
7200 +: | $ 0.04704 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are device components used to regulate the direction and flow of an electrical current. Rectifiers, on the other hand, are a type of diode that is specifically used to convert an alternating current (AC) into a direct current (DC). Single diodes are the simplest version of these components. US1JHR3G is a rectifier diode that functions as a single-phase, ultrafast recovery rectifier. Its designed specifically for efficient use in the most demanding rectification applications.
The US1JHR3G rectifier diode is composed of silicon PN-junction. It is a triple diffused chip featuring an active area of 5.507mm2. The device can operate properly at a breakover voltage of 6.8V, a maximum current of 70A, and a maximum reverse voltage of 800V. It can maintain a very low junction capacitance of 1.15 pF when operating at rated conditions.
The main function of the US1JHR3G diode is rectification, which is a process of converting alternating currents into direct currents. This is done by utilizing its junction barrier layer, which acts as a barrier for the current. When the voltage of the AC signal is larger than the barrier voltage, the positive current starts to flow, and when the voltage of the AC signal is smaller than the barrier voltage, the negative current starts to flow. The device can maintain high efficiency during rectification because of its low junction capacitance and its fast switching speed.
The US1JHR3G diode is also very well fit for some demanding applications. Its wide range of operation temperatures and its low reverse junction capacitance make it perfect for high power applications, like power supplies and other power management applications. It is also very useful for applications that require high efficiency, such as solar panels and electric vehicles. Finally, its fast switching speed makes it suitable for applications in renewable energy and industrial robotics.
Overall, the US1JHR3G single rectifier diode is a great choice for a variety of high power applications. It offers excellent performance and reliability due to its low junction capacitance and wide range of operating temperatures. It also has a fast switching time, allowing for efficient use in demanding rectification applications. As such, the US1JHR3G makes an ideal solution for power management, renewable energy, industrial robotics, and a variety of other applications that require high efficiency and reliability.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1JHE3_A/H | Vishay Semic... | -- | 12600 | DIODE GEN PURP 600V 1A DO... |
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US1J R3G | Taiwan Semic... | 0.06 $ | 14400 | DIODE GEN PURP 600V 1A DO... |
US1J-TP | Micro Commer... | -- | 5000 | DIODE GEN PURP 600V 1A DO... |
US1JDF-13 | Diodes Incor... | 0.07 $ | 1000 | DIODE GEN PURPOSE 600V 1A... |
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US1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
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US1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
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