US1JHE3_A/I Discrete Semiconductor Products |
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Allicdata Part #: | US1JHE3_A/IGITR-ND |
Manufacturer Part#: |
US1JHE3_A/I |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1JHE3_A/I Datasheet/PDF |
Quantity: | 1000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1J |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes can be found in practically every electronic circuit. From power supplies to LEDs and mobile phones, diodes form the backbone of many applications. The rectifiers are the most common type of diodes, and the single rectifier is a commonly used device. Here we will describe the application field and the working principle of US1JHE3_A/I single rectifiers.
The US1JHE3_A/I single rectifier is a high voltage, high current diode designed for full-wave rectification. It is a large form factor with a leadless package ideal for high current applications. It can be used in switching power supplies, security systems, lighting circuits, and telecommunication applications. With its regulating capability, it can maintain a constant voltage at the required load level even during load cycling.
The working principle of the US1JHE3_A/I single rectifier is based on a PN-junction. A PN-junction is formed when two semiconductors, a P-type and an N-type, are in contact with each other. When a voltage is applied across the junction, electrons flow from the P-type semiconductor to the N-type semiconductor. This is called forward biasing. When the voltage is reversed, the direction of the current changes and the electrons flow from the N-type semiconductor to the P-type semiconductor. This is referred to as reverse biasing.
The US1JHE3_A/I bridge rectifier consists of four diodes connected in a bridge configuration. When an AC voltage is applied across the bridge rectifier, the diodes start to conduct alternatingly, depending on the polarity of the voltage. During the positive cycle of the AC signal, the upper diodes are forward biased and conduct current, resulting in a positive voltage at the output. During the negative cycle of the AC signal, the lower diodes are forward biased and conduct current, resulting in a negative voltage at the output.
The bridge rectifier is a popular choice for applications where the load current varies through time. It allows the flow of current in a single direction, perfect for supplying equipment with DC power. The bridge rectifier is also a reliable circuit compared to other circuits that relies on a single diode to rectify the AC signal. The US1JHE3_A/I single rectifier is an ideal choice for applications with high current and high voltage loads. It has excellent temperature stability, superior surge handling capability, and high forward current ratings.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1JHE3_A/H | Vishay Semic... | -- | 12600 | DIODE GEN PURP 600V 1A DO... |
US1JFA | ON Semicondu... | 0.08 $ | 30000 | DIODE GEN PURP 600V 1A SO... |
US1J R3G | Taiwan Semic... | 0.06 $ | 14400 | DIODE GEN PURP 600V 1A DO... |
US1J-TP | Micro Commer... | -- | 5000 | DIODE GEN PURP 600V 1A DO... |
US1JDF-13 | Diodes Incor... | 0.07 $ | 1000 | DIODE GEN PURPOSE 600V 1A... |
US1JE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
US1JFL-TP | Micro Commer... | 0.07 $ | 10000 | DIODE GEN PURP 600V 1A DO... |
US1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
US1J-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 600V 1A SM... |
US1J M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHR3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/61T | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A SM... |
US1J/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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