US1J R3G Discrete Semiconductor Products |
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Allicdata Part #: | US1JR3GTR-ND |
Manufacturer Part#: |
US1J R3G |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1J R3G Datasheet/PDF |
Quantity: | 14400 |
1800 +: | $ 0.04960 |
3600 +: | $ 0.04313 |
5400 +: | $ 0.03881 |
12600 +: | $ 0.03451 |
45000 +: | $ 0.03235 |
90000 +: | $ 0.02875 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Diodes are essential components of modern electrical and electronic systems. They are used in many areas of electrical and electronic engineering such as circuit protection, signal rectification, signal transmission and control, power conversion and regeneration, and in applications that require fast switching or high-bandwidth switching. Among all types of diodes, the US1J R3G type is a very popular and widely used rectifier diode. This article will discuss the US1J R3G application field and working principle.
The US1J R3G is a single rectifying diode, which is a two-terminal semiconductor device. It has a low reverse leakage current, a high forward blocking voltage rating, and a high-voltage breakdown potential. It is used in many different applications, such as overvoltage protection, rectification of AC signals, switching, frequency rectification, and noise suppression. In addition, it is often used as a logic-level switch, as it can switch voltages higher than the rated voltage of the diode.
In terms of its application field, the US1J R3G is primarily used for AC to DC rectification and for the control of DC powered devices. For AC to DC rectification, the US1J R3G is connected in series with an AC source and an AC load, thus allowing the diode to serve as a half-wave rectifier. The diode serves to limit the flow of current to the load, while the voltage is rectified at the same time. As a result, the output is a DC signal of half the amplitude of the input AC signal.
The US1J R3G is also commonly used as a control device in DC motor controllers and other DC power-controlled applications, as it can switch voltages higher than the rated voltage of the diode. The US1J R3G can be connected in series with the DC source and an indicator LED, thus controlling the flow of power to the LED and allowing the LED to be lit when the required desired levels of power are present in the system. Additional control circuitry is also often used to ensure that the LED doesn\'t stay lit when the power level is too low.
Overall, the US1J R3G is a very versatile rectifying diode and is often used in a variety of applications. It is reliable and can be used in a wide range of voltage and power applications, making it a popular choice for circuit protection, rectification, switching, and other types of high-voltage applications.
The working principle of the US1J R3G is quite simple. It acts as a rectifier by allowing current to flow in one direction only, while blocking any current flow in the opposite direction. This is due to the fact that the diode has a low reverse leakage current, which prevents current from flowing in the opposite direction. In addition, the high-voltage breakdown potential of the diode acts to limit the current from flowing any further, thus providing additional protection against overvoltage.
In addition, the US1J R3G has a high forward blocking voltage rating which allows the device to block higher voltages from passing through. This makes the US1J R3G an ideal choice for applications where higher voltages need to be controlled and prevented from passing through. The US1J R3G is also a great choice for applications that require fast switching or high-bandwidth switching, as its internal structure and design enables it to handle these types of applications.
Overall, the US1J R3G is an excellent choice of rectifying diode for many different applications, as it has a low reverse leakage current, a high forward blocking voltage rating, and a high-voltage breakdown potential. It is reliable and can be used for AC to DC rectification, the control of DC powered devices, switching, frequency rectification, noise suppression, and many other applications. As such, it is a highly recommended choice for circuit protection, rectification, switching, and other types of high-voltage applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1JHE3_A/H | Vishay Semic... | -- | 12600 | DIODE GEN PURP 600V 1A DO... |
US1JFA | ON Semicondu... | 0.08 $ | 30000 | DIODE GEN PURP 600V 1A SO... |
US1J R3G | Taiwan Semic... | 0.06 $ | 14400 | DIODE GEN PURP 600V 1A DO... |
US1J-TP | Micro Commer... | -- | 5000 | DIODE GEN PURP 600V 1A DO... |
US1JDF-13 | Diodes Incor... | 0.07 $ | 1000 | DIODE GEN PURPOSE 600V 1A... |
US1JE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
US1JFL-TP | Micro Commer... | 0.07 $ | 10000 | DIODE GEN PURP 600V 1A DO... |
US1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
US1J-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 600V 1A SM... |
US1J M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHR3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/61T | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A SM... |
US1J/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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