US1J-E3/5AT Discrete Semiconductor Products |
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Allicdata Part #: | US1J-E3/5ATGITR-ND |
Manufacturer Part#: |
US1J-E3/5AT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1J-E3/5AT Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1J |
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US1J-E3/5AT Diodes - Rectifiers - Single Application Field and Working Principle
The US1J-E3/5AT diode is a single rectifier diode commonly employed in rectifying circuits used in numerous applications. The US1J-E3/5AT diodes has a high average forward current and can withstand high surge current. It is available in the plastic TO-251AA package with a guard ring construction, which is ideal for automotive applications.
The guard ring construction of the US1J-E3/5AT diode provides improved protection against external electrical transients. It features a molded case with a guard core, which helps limit the transient energy that can reach the junction. Additionally, it has a silicon epitaxial chip, which provides a low forward voltage drop and high surge current capability.
The US1J-E3/5AT diode can be used in rectifying circuits to convert AC voltage to DC voltage. It works by converting the alternating current (AC) signal into a direct current (DC) signal. In a rectifying circuit, the AC signal is fed through the diode, and the diode will either allow or block the signal based on the voltage polarity. When the voltage is positive with respect to the anode, the diode will conduct and will allow the current to flow. When the voltage is negative with respect to the anode, the diode will block the signal, preventing it from flowing.
The US1J-E3/5AT diode is a versatile device that can be used in many different rectifying applications. It can be used to rectify low voltage signals (less than 10 volts) or high voltage signals (over 10 volts). It is commonly used in automotive applications such as alternators, starters, and DC/DC converters. It is also used in applications such as medical equipment, instrumentation, and consumer electronics.
The US1J-E3/5AT diode is a reliable and cost-effective device that is commonly used in rectifying circuits. It features a high average forward current and can withstand high surge current. Additionally, its guard ring construction helps protect it from external electrical transients. This diode can be used in a variety of rectifying applications, making it a versatile and reliable choice for many different applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1JHE3_A/H | Vishay Semic... | -- | 12600 | DIODE GEN PURP 600V 1A DO... |
US1JFA | ON Semicondu... | 0.08 $ | 30000 | DIODE GEN PURP 600V 1A SO... |
US1J R3G | Taiwan Semic... | 0.06 $ | 14400 | DIODE GEN PURP 600V 1A DO... |
US1J-TP | Micro Commer... | -- | 5000 | DIODE GEN PURP 600V 1A DO... |
US1JDF-13 | Diodes Incor... | 0.07 $ | 1000 | DIODE GEN PURPOSE 600V 1A... |
US1JE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
US1JFL-TP | Micro Commer... | 0.07 $ | 10000 | DIODE GEN PURP 600V 1A DO... |
US1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
US1J-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 600V 1A SM... |
US1J M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHR3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/61T | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A SM... |
US1J/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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