Allicdata Part #: | US1JM2G-ND |
Manufacturer Part#: |
US1J M2G |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Taiwan Semiconductor Corporation |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1J M2G Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.04053 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 5µA @ 600V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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The US1J M2G rectifier diode is a specialty diode used for various applications and offers an ultra-fast response time. This small-volume device offers an excellent cost-performance ratio and is designed to offer superior thermal performance. This low-cost and reliable product features a high current density and high level of reverse leakage.
The US1J M2G series rectifier diodes are suitable for use in power supplies, adaptors, and DC-DC converters. The fast recovery time of the device ensures superior electrical performance and low power losses compared to standard rectifiers. The device provides superior overload characteristics and a wide temperature range. This makes the device suitable for a variety of applications including consumer appliances, communications, power tools, LED lighting, automotive, and aerospace.
The device features a very thin silicon die with a very thin uniform PN junction. This makes it ideal for very low reverse voltage applications. The rectifier can also be operated at much higher current densities than standard rectifiers which makes it suitable for high-power devices. The device also features a high level of thermal stability which ensures the device operates efficiently over a wide temperature range.
The US1J M2G rectifier diodes feature a reverse rectification characteristic. When the voltage across the device is increased, the rectifying action is increased and current can flow in the reverse direction. The device is designed for low voltage and low current applications and offers excellent rectification performance. The device is suitable for use in applications where the reverse leakage current must remain extremely low during normal operation.
The device features a high level of thermal stability and a relatively constant voltage drop across the device. This makes the US1J M2G rectifier diode suitable for use in applications where power supplies may be subjected to temperature fluctuations. This also makes the device suitable for use in applications where the power supply must maintain a constant voltage. The low reverse currentduring normal operation makes the device suitable for use in applications where power losses must be kept to a minimum.
The device has a very low forward voltage drop which ensures that power losses remain low during operation. The low forward voltage drop and high output current ratings of the device make it suitable for powering a range of devices. The low reverse leakage current ensures that the device does not cause current overloads and ensures efficient system operation. The low forward voltage drop of the device ensures good efficiency, even in high power applications.
The US1J M2G rectifier diode provides superior performance than standard rectifiers. The device has a low reverse leakage current and high surge capability, making it suitable for use in a range of applications. The fast recovery time of the device ensures a high level of efficiency even in high power applications. The device is also suitable for use in a variety of applications, such as consumer appliances, communications, power tools, LED lighting, automotive, and aerospace.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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US1JHE3_A/H | Vishay Semic... | -- | 12600 | DIODE GEN PURP 600V 1A DO... |
US1JFA | ON Semicondu... | 0.08 $ | 30000 | DIODE GEN PURP 600V 1A SO... |
US1J R3G | Taiwan Semic... | 0.06 $ | 14400 | DIODE GEN PURP 600V 1A DO... |
US1J-TP | Micro Commer... | -- | 5000 | DIODE GEN PURP 600V 1A DO... |
US1JDF-13 | Diodes Incor... | 0.07 $ | 1000 | DIODE GEN PURPOSE 600V 1A... |
US1JE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
US1JFL-TP | Micro Commer... | 0.07 $ | 10000 | DIODE GEN PURP 600V 1A DO... |
US1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
US1J-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 600V 1A SM... |
US1J M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHR3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/61T | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A SM... |
US1J/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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