US1JE-TP Discrete Semiconductor Products

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The US1JE-TP is a diode rectifier from Taiwan Semiconductor Corporation that has many applications and works through an interesting con formation and chemistry. This device is a single-way, symmetrical and double-ending rectifier that has a low reverse recovery time and low leakage characteristics. It is mainly used in low-voltage and low-current applications and is the most popular choice for switching voltage regulators, DC to DC converters, electronic ballast and various other applications.

The device consists of two diodes connected in series, each diode having an anode and a cathode. The anodes are connected to the positive line and the cathode to the negative line. This is the configuration that allows the device to conduct electricity by forming an electric current.

Each diode consists of a dielectric layer or gate oxide layer sandwiching a conductive gate formed between the gate oxide and the anode. The gate oxide acts as a barrier preventing the current from flowing outside the diode, while the gate opens up a path for electrons to flow when a voltage is applied. This is known as the rectifying principle and is the basis of the US1JE-TP working.

What makes this rectifier unique from other diodes and bridge rectifiers is its low reverse recovery time. When the voltage is removed, and the device is no longer conducting, the gate oxide acts as a very thin insulator, allowing the electrons to quickly flow back to its original position. This makes it suitable for high frequency applications as it can quickly switch from conducting to non-conducting.

The device also has low leakage current, making it suitable for use in low voltage and low current applications. This is because electrons are not allowed to flow back to the origin, reducing the amount of leakage current.

The US1JE-TP diode rectifier is a versatile device with a wide range of applications. It is mainly used in low-voltage and low-current applications, such as switching voltage regulators, DC to DC converters, electronic ballast and various other applications. Due to its low reverse recovery time and low leakage current, the device is suitable for high frequency applications as well.

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