Allicdata Part #: | US1J-M3/5AT-ND |
Manufacturer Part#: |
US1J-M3/5AT |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1J-M3/5AT Datasheet/PDF |
Quantity: | 1000 |
15000 +: | $ 0.05044 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | -- |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
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Diodes are an integral part of a wide range of electronic components and systems. The US1J-M3/5AT is a commonly used rectifier diode. This product is widely used in power switch mode power supplies, RF measurement systems, telecommunications systems, and other applications requiring the smooth control of current or voltage. This article will discuss the application fields and working principle of the US1J-M3/5AT.
The US1J-M3/5AT is a discrete diode for various applications. It is designed for high-speed switching operations, capable of blocking voltages up to 400V and dissipating power up to 2 watts. The product is known for its low forward voltage drop, very low reverse leakage current, and high impedance. These properties make it suitable for high-frequency switching applications such as radio frequency measurements and the control of switching power supplies.
In terms of applications, the US1J-M3/5AT is typically used in power switch mode power supplies (SMPS), radio frequency (RF) measurements, voltage regulation, and telecommunications systems. In SMPS, it is used as a rectifier to convert alternating current (AC) input into direct current (DC) output. In RF measurements, it is used to block and/or pass defined voltage levels. Lastly, in telecommunications systems, it can be used for various purposes including signal routing, signal processing, and power switching.
The working principle of the US1J-M3/5AT is based on the idea of a rectifier. When a conducting device such as the diode is placed between two points with different electrical polarities, the device action is to convert the alternating current of one polarity to direct current (DC) of the same polarity. This is the main application of the device in switching power supplies, where it is used to convert AC input into DC output.
In terms of performance, the US1J-M3/5AT displays excellent power dissipation and junction capacitance performance. The device can handle high blocking voltages up to 400V and its power dissipation is rated at 2 watts. The junction capacitance of the device is one of its unique features, making it ideal for high-frequency switching applications. The low forward voltage drop and high impedance of the device further demonstrate its excellent performance.
The US1J-M3/5AT is an essential component in a wide range of electronic components and systems. Its application fields include RF measurements, voltage regulation, and telecommunications systems. Additionally, the device features low forward voltage drop, very low reverse leakage current, and high impedance, making it suitable for high-frequency switching applications. Finally, it displays excellent power dissipation and junction capacitance performance, making it an ideal rectifier for power switch mode power supplies.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
US1JHE3_A/H | Vishay Semic... | -- | 12600 | DIODE GEN PURP 600V 1A DO... |
US1JFA | ON Semicondu... | 0.08 $ | 30000 | DIODE GEN PURP 600V 1A SO... |
US1J R3G | Taiwan Semic... | 0.06 $ | 14400 | DIODE GEN PURP 600V 1A DO... |
US1J-TP | Micro Commer... | -- | 5000 | DIODE GEN PURP 600V 1A DO... |
US1JDF-13 | Diodes Incor... | 0.07 $ | 1000 | DIODE GEN PURPOSE 600V 1A... |
US1JE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
US1JFL-TP | Micro Commer... | 0.07 $ | 10000 | DIODE GEN PURP 600V 1A DO... |
US1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
US1J-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 600V 1A SM... |
US1J M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHR3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/61T | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A SM... |
US1J/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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