Allicdata Part #: | US1JHE3/5AT-ND |
Manufacturer Part#: |
US1JHE3/5AT |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Semiconductor Diodes Division |
Short Description: | DIODE GEN PURP 600V 1A DO214AC |
More Detail: | Diode Standard 600V 1A Surface Mount DO-214AC (SMA... |
DataSheet: | US1JHE3/5AT Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Diode Type: | Standard |
Voltage - DC Reverse (Vr) (Max): | 600V |
Current - Average Rectified (Io): | 1A |
Voltage - Forward (Vf) (Max) @ If: | 1.7V @ 1A |
Speed: | Fast Recovery = 200mA (Io) |
Reverse Recovery Time (trr): | 75ns |
Current - Reverse Leakage @ Vr: | 10µA @ 600V |
Capacitance @ Vr, F: | 10pF @ 4V, 1MHz |
Mounting Type: | Surface Mount |
Package / Case: | DO-214AC, SMA |
Supplier Device Package: | DO-214AC (SMA) |
Operating Temperature - Junction: | -55°C ~ 150°C |
Base Part Number: | US1J |
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Diodes are a type of electrical component that has two terminals and allows current to flow in only one direction. The US1JHE3/5AT is a single-phase, surface-mounted, fast recovery rectifier developed by Vishay Intertechnology, Inc. It is a popular choice for forward conversion applications due to its small size, high efficiency, and low leakage current. This article will discuss the US1JHE3/5AT’s application field and working principle.
Applications:
The US1JHE3/5AT rectifier is widely used in all kinds of forward conversion applications such as power supplies, computer power supplies, chargers, ballasts and inverters. It is particularly suited to applications in which space is limited as its small size allows for easy installation in tight spaces. It also has a wide operating temperature range, making it suitable for high temperature environments. Additionally, the US1JHE3/5AT offers excellent surge capability and is designed to meet the harsh requirements of automotive applications.
Working Principle:
The US1JHE3/5AT rectifier works by passing current through its two terminals in only one direction. Its two terminals are referred to as its anode (+) and cathode (-). When a voltage is applied to the anode and cathode of the rectifier, current only flows from the anode to the cathode, not from the cathode to the anode. This is due to the characteristics of the rectifier’s semiconductor material, which limits current flow in one direction. This process is known as rectification, and is what gives the rectifier its name.
When the voltage is removed, the rectifier stops conducting current and blocks current in both directions. This process is known as recovery, and is why the US1JHE3/5AT rectifier is referred to as a fast recovery rectifier. The fast recovery of the US1JHE3/5AT enables it to quickly switch from conducting to non-conducting states, which makes it ideal for applications in which fast switching is required.
Conclusion:
The US1JHE3/5AT rectifier is a popular choice for forward conversion applications due to its small size, high efficiency, and low leakage current. It is well-suited for applications where space is limited and has a wide operating temperature range. Additionally, it offers excellent surge capability and is designed to meet the harsh requirements of automotive applications. Its fast recovery characteristics make it ideal for applications in which fast switching is required. The US1JHE3/5AT is an effective device for any forward conversion application.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
US1JHE3_A/H | Vishay Semic... | -- | 12600 | DIODE GEN PURP 600V 1A DO... |
US1JFA | ON Semicondu... | 0.08 $ | 30000 | DIODE GEN PURP 600V 1A SO... |
US1J R3G | Taiwan Semic... | 0.06 $ | 14400 | DIODE GEN PURP 600V 1A DO... |
US1J-TP | Micro Commer... | -- | 5000 | DIODE GEN PURP 600V 1A DO... |
US1JDF-13 | Diodes Incor... | 0.07 $ | 1000 | DIODE GEN PURPOSE 600V 1A... |
US1JE-TP | Micro Commer... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A SM... |
US1JFL-TP | Micro Commer... | 0.07 $ | 10000 | DIODE GEN PURP 600V 1A DO... |
US1JDFQ-13 | Diodes Incor... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DF... |
US1J-13-F | Diodes Incor... | -- | 90000 | DIODE GEN PURP 600V 1A SM... |
US1J M2G | Taiwan Semic... | 0.04 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHM2G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHR3G | Taiwan Semic... | 0.05 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/5AT | Vishay Semic... | 0.06 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-M3/61T | Vishay Semic... | 0.07 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3_A/I | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/5AT | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-E3/61T | Vishay Semic... | -- | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/5AT | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1JHE3/61T | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
US1J-13 | Diodes Incor... | -- | 1000 | DIODE GEN PURP 600V 1A SM... |
US1J/1 | Vishay Semic... | 0.0 $ | 1000 | DIODE GEN PURP 600V 1A DO... |
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