Allicdata Part #: | VN2210N2-ND |
Manufacturer Part#: |
VN2210N2 |
Price: | $ 8.94 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 100V 1.7A TO39-3 |
More Detail: | N-Channel 100V 1.7A (Tj) 360mW (Tc) Through Hole T... |
DataSheet: | VN2210N2 Datasheet/PDF |
Quantity: | 312 |
1 +: | $ 8.12700 |
25 +: | $ 7.45318 |
100 +: | $ 7.24955 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 100V |
Current - Continuous Drain (Id) @ 25°C: | 1.7A (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 5V, 10V |
Rds On (Max) @ Id, Vgs: | 350 mOhm @ 4A, 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 10mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 500pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 360mW (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-39 |
Package / Case: | TO-205AD, TO-39-3 Metal Can |
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The VN2210N2 is an enhancement mode field effect transistor (FET) designed specifically for analog and digital switching applications. It is a single-gate MOSFET transistor integrated circuit that is optimized for general purpose and low voltage sensing applications alike. With features such as low and negative Vgs (voltage gate source) thresholds, high input current, low R(on). and high speed turn-on, the VN2210N2 makes a very good choice for analog and digital switching applications.
The VN2210N2,is a single-gate FET (field effect transistor) that features an enhancement mode. This means that it is activated by a voltage which, in turn, causes the channel to open, allowing current to flow.
This is advantageous as it gives the user greater control over the FETs, as the user can simply adjust the voltage to the gate to control the transistor’s operation. Furthermore, the VN2210N2 has a very low threshold voltage, meaning that even relatively low gate voltages can be used to activate the transistor.
The VN2210N2 is well suited to both analog and digital applications, and it has several features which make it particularly attractive for these uses. Firstly, the VN2210N2 has a very low R(on),which helps reduce power consumption and heat output. In addition to this, the VN2210N2 has a high input current which can be adjusted by the user. This allows for a higher degree of control over the transistor’s operation, making it well suited for a variety of analog and digital applications. However, the main benefit of the VN2210N2 is its high switching speed.
This allows for faster operation of the transistor, making it ideal for a range of applications from high speed switching to low voltage sensing. In addition to this, the VN2210N2 also has low and negative Vgs thresholds, meaning that the transistor can operate efficiently and accurately even in low voltage conditions.
In summary, the VN2210N2 is an excellent enhancement mode FET designed specifically for analog and digital switching applications. It features a low and negative Vgs threshold, high input current, low R(on), and high speed turn-on, making it well suited for a wide range of applications. Moreover, the VN2210N2’s low-voltage operation and high switching speed make it particularly well-suited for low voltage sensing applications. As such, the VN2210N2 is an ideal choice for many analog and digital switching applications.
The specific data is subject to PDF, and the above content is for reference
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