VN2222LL-G-P003

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	60pF @ 25V
FET Feature:	--
Power Dissipation (Max):	400mW (Ta), 1W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

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VN2222LL-G-P003 Application Field and Working PrincipleThe VN2222LL-G-P003 is a N-Channel enhancement mode Field Effect Transistor (FET). It is a semiconductor device consisting of source, gate and drain terminals that use electrical current for controlling the conduction of a semiconductor material. It can be used for amplification or for switching properties. The device has a breakdown voltage of 30V which limits the maximum voltage that can pass through the device. It also has a drain current of 3A making it suitable for most applications. It is also sensitive to temperature and can be used in temperature control circuits. The device has a low gate input capacitance of 6pF making it suitable for switching applications. The primary application of this device is power management in computers and computer peripherals. It can be used to control the power supply to different components such as hard drives, optical drives, graphics cards, and other devices. It can also be used to switch power to different components on and off in a computer system. This device is also useful in other power management applications such as lighting and HVAC systems.The working principle of the VN2222LL-G-P003 is based on the basic principle of charge transfer. When a voltage is applied to the gate of the device, a field is created which attracts negative charge carriers to the gate and repels positive charge carriers. This creates a depletion region and changes the conductivity of the device. This change in conduction can be used to regulate the flow of current through the device. The VN2222LL-G-P003 is an enhancement mode transistor, meaning that the current can only pass through the device when a voltage is applied to the gate. This makes the device ideal for use in power management applications as it is able to switch power on and off quickly and efficiently.In conclusion, the VN2222LL-G-P003 is a N-Channel enhancement mode FET which is useful in controlling the flow of current in computer systems and other applications. It has a breakdown voltage of 30V and a drain current of 3A which makes it suitable for most applications. The device is sensitive to temperature and has a low gate input capacitance which makes it suitable for switching applications. The device operates on the principle of charge transfer and is ideal for use in power management applications.

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