VN2222LLRLRAG Discrete Semiconductor Products |
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Allicdata Part #: | VN2222LLRLRAGOSTR-ND |
Manufacturer Part#: |
VN2222LLRLRAG |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ON Semiconductor |
Short Description: | MOSFET N-CH 60V 150MA TO-92 |
More Detail: | N-Channel 60V 150mA (Ta) 400mW (Ta) Through Hole T... |
DataSheet: | VN2222LLRLRAG Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 150mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 7.5 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2.5V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 60pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 400mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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The VN2222LLRLRAG is a power transistor made by Sanken Electric Co. Ltd., which is a part of the extended series of RF transistors and switching transistors. This transistor is used for a wide range of applications in the field of switched-mode power supplies (SMPS) because of its low "on" resistance and high power stability. The applications of the VN2222LLRLRAG include pulse modulation circuits, HV/LV power supplies, RF power stages, and other related circuits.
This transistor has a 4-wire field-effect transistor (FET) structure comprised of an N-channel insulated gate field-effect transistor (IGFET) that is housed in an SOT-23 package. It features a low "on" resistance (Rds(on)) of 1.2 Ω, a low maximum operating current (Ids) of 4 A, and a maximum voltage rating of 40 V. The extended series of VN2222LLRLRAG provides excellent long-term reliability, high current carrying capability, and electrostatic discharge (ESD) protection.
The working principle of this transistor is based on the combination of two transistors, an IGFET and a bipolar junction transistor (BJT). The IGFET is used as a high impedance input device and the BJT is used as a low impedance power device. The VN2222LLRLRAG utilizes an N-channel IGFET as the input device and a BJT as the output device. The IGFET acts as a switch that turns on and off the flow of current. When the switch is off, the resistance of the transistor is very high, which prevents the current from flowing. When the switch is on, the resistance of the transistor is very low, providing a path for the current to flow.
This transistor also includes an insulated gate field effect (IGFET) which allows for a fast switching action and a high frequency operation. For example, the IGFET has a low input capacitance (Ciss), which is ideal for high-frequency switching circuits. Additionally, the output transistor has a low-voltage capability (VDSS), which is beneficial for low-voltage applications including data converters, motor control circuits and low power voltage regulators.
The VN2222LLRLRAG is suitable for various types of transistor circuits. It is used in switching power supplies, as well as in amplifier circuits, power booster circuits, and voltage regulators. It is also used in multi-phase switching circuits, such as those found in DC-DC converters and amplifiers. In addition, the transistor can be used as a switch in high-speed circuits, such as clock signal generators, signal conditioners, and pulse-width modulation (PWM) circuits.
In conclusion, the VN2222LLRLRAG is a 4-wire field-effect transistor (FET) that is used for a wide range of applications in the field of switched-mode power supplies (SMPS) because of its low "on" resistance and high power stability. Its working principle is based on the combination of two transistors, an IGFET and a bipolar junction transistor (BJT). The transistor can be used in various types of transistor circuits, such as switching power supplies, amplifier circuits, power booster circuits, and voltage regulators. Additionally, it is ideal for high-frequency switching circuits, as it has a low input capacitance (Ciss) and a low-voltage capability (VDSS).
The specific data is subject to PDF, and the above content is for reference
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