VN2222LL-G-P013

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The VN2222LL-G-P013 is a type of N-channel enhancement mode MOSFET. It is a single component with an insulated gate field effect transistor. It has many features that make it a suitable component for various types of applications.

The device is a dual N-channel power MOSFET that is fabricated using low-power processing technologies and advanced packaging techniques. It has a low on-resistance and is housed in a small SOT23 package. The device is ideal for space-constrained applications. It also has low gate capacitance, making it suitable for high speed switching and power management applications. Additionally, the device is equipped with an integrated diode for snubber protection.

The device has a drain-source voltage rating of 10V, and a drain-source current rating of 100mA. It has a Gate Threshold Voltage of 4V, a gate-source voltage of 10V, and a Gate-Source Capacitance of 130pF. Thats. It also has a breakdown voltage of 40V.

The device is designed for use in different types of electronic systems, including motor control and signal conditioning, embedded systems, power management, portable device and audio amplifiers. It can also be used in general switching applications, such as solenoid and relay drivers, analog switch control, power MOSFET drivers, and digital logic interfacing.

The working principle of the VN2222LL-G-P013 is based on the depletion-mode mechanism of the MOSFET. A depletion region is formed by applying a negative voltage to the Gate terminal. This creates a region without any charge carriers in the Gate-Source junction. This forms an electric field between the Gate and the Source and acts as a voltage-controlled resistor. This increase in resistance causes a decrease in the drain current.

The device can be used to control the voltage and current in the circuit. It has the advantage of low on-resistance and can handle high power loads. The VN2222LL-G-P013 is an ideal device for many applications, offering high speed switching, reliable performance and integrated protection features. Its small size and low cost make it a suitable choice in applications where space and cost are a factor.

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