VN2222LL-G

Series:	--
Packaging:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60V
Current - Continuous Drain (Id) @ 25°C:	230mA (Tj)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	7.5 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:	2.5V @ 1mA
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	60pF @ 25V
FET Feature:	--
Power Dissipation (Max):	400mW (Ta), 1W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction
The VN2222LL-G is a voltage regulated MOSFET (metal-oxide-semiconductor field-effect transistor). It is used when a higher breakdown voltage and/or higher power load than a BJT (bipolar junction transistor) can provide is required. It is suitable for use with either AC or DC loads. The VN2222LL-G comes in a TO-92 package and is specifically designed for applications requiring switching and low noise.Application Field
The VN2222LL-G is typically used for switching and low noise applications. It is suitable for both AC and DC loads up to a maximum power dissipation of 600mW. Its applications include:

• Analog switch applications;
• Switched amplifier applications;
• High voltage switching applications;
• High frequency switching applications; and
• Low voltage noise applications.

The VN2222LL-G is ideal for use in systems where a high breakdown voltage and/or a high power load is required. Its internal structure and operating characteristics make it a reliable and effective device for these types of applications.Working Principle
The VN2222LL-G operates on the same principle as many other MOSFETs: a gate voltage applied to the device changes the resistance between the source and drain terminals. The gate voltage is proportional to the amount of current that can be passed to the drain terminal. The higher the gate voltage, the more current can be passed through.The VN2222LL-G is designed to operate with a DC voltage of up to 10 volts and an AC voltage of up to 6 volts. When the device is in the “on” state, a voltage applied at the gate will cause the drain and source currents to flow, as well as the power delivered to the load. As the gate voltage increases, the drain and source current will also increase. The maximum current that can be passed to the drain terminal is limited by the maximum value of the gate voltage, the size of the channel, and the resistance of the channel.Conclusion
The VN2222LL-G is a voltage regulated MOSFET that is particularly well suited for applications requiring switching and low noise. It is ideal for use with AC or DC loads and can provide a higher breakdown voltage and/or higher power load than a BJT. It is also easy to operate and highly reliable. In summary, the VN2222LL-G is a great device for applications requiring switching and low noise.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description