VN2210N3-G

Series:	--
Packaging:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100V
Current - Continuous Drain (Id) @ 25°C:	1.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	350 mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	2.4V @ 10mA
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	500pF @ 25V
FET Feature:	--
Power Dissipation (Max):	740mW (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-92-3
Package / Case:	TO-226-3, TO-92-3 (TO-226AA)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

VN2210N3-G Application Field and Working Principle

The VN2210N3-G is a N-Channel enhancement mode MOSFET (Metal Oxide Semiconductor Field Effect Transistor) which has been designed for low current, low voltage applications such as DC/DC converters and low-side switching circuits. It is designed to reduce the switching losses when switching with a power MOSFET, while also providing excellent total gate charge (Qg) and total gate capacitance (Ciss). The VN2210N3-G is a high performance, cost-effective alternative to conventional MOSFETs.

Features

The VN2210N3-G features a 22A continuous drain current (ID), 4.7V to 16V drain source voltage (VDS), up to 970mΩ on-state resistance (RDS(ON)), and 65ns switching speed. It has a total gate charge (Qg) of 21nC and a total gate capacitance (Ciss) of 712pF, making it well-suited for high current, low voltage applications. Additionally, the VN2210N3-G supports a wide operating temperature range of -55°C to +150°C, making it ideal for a variety of harsh environment applications.

Applications

The VN2210N3-G is commonly used in low current, low voltage switching applications such as DC/DC converters, power amplifiers, power supplies, motor control, and low-side switching circuits. The VN2210N3-G’s low on-state resistance and fast switching speed make it well-suited for applications requiring low power consumption, minimized part count and space, and good efficiency.

Working Principle

The VN2210N3-G is an N-Channel enhancement mode MOSFET. This type of device is constructed of a source terminal at one end, a drain terminal at the other end, and a gate terminal between the source and drain terminals. When an electric field is applied to the gate terminal, it attracts free electrons in the channel and causes a conducting channel to be formed between the source and the drain. This is referred to as the “enhancement” mode of operation and allows for current to flow between the source and drain.The output of this device is dependent on the input signal applied to the gate terminal. As the input voltage increases, so does the current flowing through the channel. This increase in the current is known as the Vgs-Ids curve and is used to determine the device’s ability to drive a given load. The Vgs-Ids curve also tells us the voltage at which the device will start to conduct (Vgs(threshold)).The VN2210N3-G has a maximum drain source voltage (VDS) of 16V and an RDS(ON) of 970mΩ. This device can support up to 22A of continuous current.In summary, the VN2210N3-G is an N-Channel enhancement mode MOSFET designed for low current, low voltage applications such as DC/DC converters, power amplifiers, power supplies and motor control. With its fast switching speed, low on-state resistance and wide operating temperature range, it is an attractive device for a variety of applications requiring low power consumption, minimized part count and space, and good efficiency.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description