VN2406L-G Allicdata Electronics
Allicdata Part #:

VN2406L-G-ND

Manufacturer Part#:

VN2406L-G

Price: $ 0.98
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 240V 0.19A TO92-3
More Detail: N-Channel 240V 190mA (Tj) 1W (Tc) Through Hole TO-...
DataSheet: VN2406L-G datasheetVN2406L-G Datasheet/PDF
Quantity: 300
1 +: $ 0.88830
25 +: $ 0.73987
100 +: $ 0.67486
Stock 300Can Ship Immediately
$ 0.98
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 6 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
FET Feature: --
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Description

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The VN2406L-G is a high-performance, high-efficiency, 300V N-channel enhancement mode MOSFET developed by Vishay Intertechnology. It is designed for use in load switching and power conversion applications. The device has a current rating of 4A with a low RDS(ON) of 0.006 Ω. This device is ideal for portable applications and switching systems requiring low power consumption, low voltage drop and high efficiency.

VN2406L-G Application Field

The VN2406L-G is ideal for use in a wide range of applications, including:

  • Switching and regulating power supplies in audio amplifiers, computers and mobile devices.
  • DC/DC converters for telecom, data and industrial systems.
  • High-efficiency automotive and industrial systems.
  • High voltage switching applications, such as lighting and switching ballast.
  • General purpose DC-DC converters, power supplies and motor controllers.
  • Lighting applications like LED drivers, AC/DC and DC/DC converters.

VN2406L-G Working Principle

The VN2406L-G is a high-voltage N-channel enhancement mode MOSFET that operates using single-ended supply voltage. It has an insulated gate structure which helps protect the electron channel from gate overvoltage. The integrated channel is formed by depositing a thin, lightly doped n-type extension regions between the layers of gate oxide. Th

The specific data is subject to PDF, and the above content is for reference

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