Allicdata Part #: | VN2406L-G-ND |
Manufacturer Part#: |
VN2406L-G |
Price: | $ 0.98 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 240V 0.19A TO92-3 |
More Detail: | N-Channel 240V 190mA (Tj) 1W (Tc) Through Hole TO-... |
DataSheet: | VN2406L-G Datasheet/PDF |
Quantity: | 300 |
1 +: | $ 0.88830 |
25 +: | $ 0.73987 |
100 +: | $ 0.67486 |
Series: | -- |
Packaging: | Bulk |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 240V |
Current - Continuous Drain (Id) @ 25°C: | 190mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 2.5V, 10V |
Rds On (Max) @ Id, Vgs: | 6 Ohm @ 500mA, 10V |
Vgs(th) (Max) @ Id: | 2V @ 1mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 125pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) |
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The VN2406L-G is a high-performance, high-efficiency, 300V N-channel enhancement mode MOSFET developed by Vishay Intertechnology. It is designed for use in load switching and power conversion applications. The device has a current rating of 4A with a low RDS(ON) of 0.006 Ω. This device is ideal for portable applications and switching systems requiring low power consumption, low voltage drop and high efficiency.
VN2406L-G Application Field
The VN2406L-G is ideal for use in a wide range of applications, including:
- Switching and regulating power supplies in audio amplifiers, computers and mobile devices.
- DC/DC converters for telecom, data and industrial systems.
- High-efficiency automotive and industrial systems.
- High voltage switching applications, such as lighting and switching ballast.
- General purpose DC-DC converters, power supplies and motor controllers.
- Lighting applications like LED drivers, AC/DC and DC/DC converters.
VN2406L-G Working Principle
The VN2406L-G is a high-voltage N-channel enhancement mode MOSFET that operates using single-ended supply voltage. It has an insulated gate structure which helps protect the electron channel from gate overvoltage. The integrated channel is formed by depositing a thin, lightly doped n-type extension regions between the layers of gate oxide. Th
The specific data is subject to PDF, and the above content is for reference
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