Allicdata Part #: | VN2460N3-G-P014-ND |
Manufacturer Part#: |
VN2460N3-G-P014 |
Price: | $ 0.65 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 600V 0.16A TO92-3 |
More Detail: | N-Channel 600V 160mA (Tj) 1W (Ta) Through Hole TO-... |
DataSheet: | VN2460N3-G-P014 Datasheet/PDF |
Quantity: | 1000 |
2000 +: | $ 0.58401 |
Series: | -- |
Packaging: | Tape & Box (TB) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 160mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 2mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-92-3 |
Package / Case: | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
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The VN2460N3-G-P014 is a single N-Channel Enhancement Mode Field Effect Transistor. This discreet component can perform a variety of applications and is appropriate for a wide range of fields, from automotive to consumer electronics. It is an important component used in hardware, such as in motor control, robotics, and motor drive systems.
The VN2460N3-G-P014 is an enhancement mode Field Effect Transistor. It is constructed from a doped semiconductor material, usually silicon, and contains several metal contacts on its surface. The drain, source and gate contacts of the transistor each have different functions, allowing for precise control of the current flowing through the transistor. The gate contact is used to control the current flow through the device, the source provides the input voltage, and the drain carries the output current.
The electrical characteristics of the VN2460N3-G-P014 are unique, depending on the field it is used in. The drain to source voltage (VDS) of this transistor ranges from -6.3V to -19.6V, while the drain to gate voltage (VGS) is typically between -19.6V and -28.8V. Its maximum permissible drain current is 8A, with a total power dissipation of 25W. The device has a threshold voltage (Vt) between 1.2V and 4.5V, and its transfer current (gm) ranges from 1.5A to 4.5A.
The basic operation of a Field Effect Transistor mainly involves the movement of electrons from the source to the drain of the device. In the case of the VN2460N3-G-P014, a small electrical current at the gate terminal controls the flow of electrons from the source to the drain. By adjusting the voltage applied to the gate, the flow of electrons through the device can be adjusted, allowing for precise control over the current passing through the circuit.
The applications of the VN2460N3-G-P014 vary depending on the field it is used in. It is often used in motor control, robotics and motor drive systems, since it offers precise control over current flow. It is also used in consumer electronics, including television sets, DVD players and other home appliances. Additionally, the transistor is used in automotive electronics, such as powertrain and control systems.
In conclusion, the VN2460N3-G-P014 is an enhancement mode field effect transistor that can perform a variety of applications in many fields. It is constructed from doped semiconductor material and contains several metal contacts on its surface that are used to control the flow of electrons. The electrical characteristics of the device vary depending on the field it is used in, with a maximum drain current of 8A and a total power dissipation of 25W. Lastly, the applications of this device primarily involve motor control, robotics, motor drive systems, consumer electronics, and automotive electronics.
The specific data is subject to PDF, and the above content is for reference
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