VN2410L-G Allicdata Electronics
Allicdata Part #:

VN2410L-G-ND

Manufacturer Part#:

VN2410L-G

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 240V 0.19A TO92-3
More Detail: N-Channel 240V 190mA (Tj) 1W (Tc) Through Hole TO-...
DataSheet: VN2410L-G datasheetVN2410L-G Datasheet/PDF
Quantity: 296
Stock 296Can Ship Immediately
Specifications
Series: --
Packaging: Bulk 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
FET Feature: --
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Description

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The VN2410L-G is a member of the Fairchild Semiconductor family of advanced power MOSFETs. It is specially designed for low to medium current, low to medium voltage applications. The product offers a variety of features, making it one of the most efficient and cost effective power MOSFETs available on the market today. In this article we will discuss the application field and working principle of the VN2410L-G.The VN2410L-G is a single-channel, N-type MOSFET which is ideal for use in a wide range of applications such as power switches, DC-to-DC converters and other similar power management applications. The inherently low on-resistance of the device allows for very efficient operation. The device also offers fast switching speeds and a wide operating temperature range, making it suitable for use in high power applications.To understand how the VN2410L-G works, it is important to understand the principles of MOSFET operation. MOSFETs consist of a three-terminal semiconductor device characterized by independently variable gate-source and gate-drain capacitances. When a voltage is applied to the gate-source terminal, a small current flows through the channel. This current raises the voltage of the gate-drain junction, which in turn determines the on-resistance of the device.The VN2410L-G\'s low on-resistance allows it to switch high currents while dissipating very low power losses. This makes it ideal for use in high power applications, as it can efficiently transfer large amounts of power with minimal power losses. Additionally, the device is capable of switching frequencies greater than 5 MHz, making it suitable for applications requiring high frequency switching.The VN2410L-G is also capable of handling reverse voltages up to 10V, allowing it to be used in applications requiring polarity protection. The device is available in a two-lead, ultra small surface-mount package, making it easy to install and use. This makes it an ideal choice for applications where size and cost are key considerations.Overall, the VN2410L-G is a high-performance power MOSFET that is ideal for use in a wide range of applications. Its ability to efficiently transfer large amounts of power with minimal power losses, combined with its fast switching speeds and small form factor, make it a suitable choice for many power management applications.

The specific data is subject to PDF, and the above content is for reference

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