VN2410L-G-P013 Allicdata Electronics
Allicdata Part #:

VN2410L-G-P013-ND

Manufacturer Part#:

VN2410L-G-P013

Price: $ 0.52
Product Category:

Discrete Semiconductor Products

Manufacturer: Microchip Technology
Short Description: MOSFET N-CH 240V 0.19A TO92-3
More Detail: N-Channel 240V 190mA (Tj) 1W (Tc) Through Hole TO-...
DataSheet: VN2410L-G-P013 datasheetVN2410L-G-P013 Datasheet/PDF
Quantity: 1000
2000 +: $ 0.46721
Stock 1000Can Ship Immediately
$ 0.52
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 240V
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 10 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 2V @ 1mA
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 125pF @ 25V
FET Feature: --
Power Dissipation (Max): 1W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Description

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VN2410L-G-P013 is one type of single component FET transistors. This component is widely used in lower power applications due to its low-gate drive voltage and high-frequency operation. The transistor offers a wide variety of features and capabilities that make it highly suitable for diverse applications, making it one of the most widely used components in the electrical industry.

The component consists of a source, a Body, and a Drain. These three terminals control the current flow through the component. The source connects to the source of the electrical power, the gate connects to the gate terminal of the component, and the drain connects to the output terminal of the component. The component itself is a three-terminal device, with each terminal having a distinct purpose.

The component works on the principle of a four-layer-four-terminal (LLFT) switch. This means that the component is capable of switching high frequency current with a low-voltage gate drive. This is done by creating high and low-side currents across the component, and then turning the component on or off depending on the voltage applied to the gate terminal. The component can be operated in two ways – either as a bipolar transistor or as an insulated-gate bipolar transistor (IGBT).

The component is widely used in power conversion, motor control, and automotive applications. It is often used in high-frequency switching applications, such as in switching mode power supplies, high-speed electric transitory power converters, and electric motor/drive systems. Additionally, the component can also be used in many other applications, such as in audio amplifiers, power amplifiers, radio communication, RF power transistors and many others. This transistor is also suitable for use in many other applications due to its low-frequency operation and its low-power dissipation.

In order to work properly, the component must be properly connected with the right wiring. The source of the component should be connected to the power source, the gate should be connected to the appropriate drive signal, and the drain should be connected to the load. The wiring is also dependent on the type of component and the operating conditions. It is important to ensure that the proper wiring is used in order to achieve the desired performance and reliability.

The component can be used for both low and high-power applications, and is available in different packages. These packages include single-port (SIP), dual-port (DIP), and quad-port (QIP) designs. For low-power applications, the SIP package is more suitable. For medium-power applications, either the DIP or the QIP packages are more suitable. For high power applications, both the DIP and the QIP packages may be used.

The component also offers high-frequency operation, low-power dissipation and low-gate drive voltage. These properties make the component highly suitable for a wide variety of applications. This includes high-frequency switching applications, power conversion, motor control, and automotive applications. The component is also suitable for use in many other applications, such as audio amplifiers, power amplifiers, radio communication, and RF power transistors.

In conclusion, the VN2410L-G-P013 is a single component FET transistor that offers a wide variety of features and capabilities. It can be used for a variety of low and medium-power applications. It also offers high-frequency operation, low-power dissipation and low-gate drive voltage. This makes the component highly suitable for many different applications, making it one of the most widely used components in the electrical industry.

The specific data is subject to PDF, and the above content is for reference

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