VN2410LZL1G Discrete Semiconductor Products

VN2410LZL1G is a member of STMicroelectronics N-channel logic level, small footprints, low threshold Enhancement-mode MOSFETs (e-MOSFETs). Its source-drain junction continuously conducts current when a voltage is applied across the drain-source terminals. This makes it an ideal choice for a wide variety of logic-level load applications such as load switch, audio amplifier, voltage level shifter, and a low side switch in a low side circuit configuration.

VN2410LZL1G features a vertical DMOS technology that has a 30-V drain-source voltage (VDDS) rating, a 2.8-V threshold voltage (VTH), a 0.0055-Ohm typical on-resistance (RON) at VGS = 4.5 V and a 2.5-V max gate-source voltage. The device is available in the SO-7N surface mount package, simplifying the PCB design and providing a cost-effective solution for applications such as home appliances, consumer electronics, drone, and industrial automation.

VN2410LZL1G’s working principle is based on its main component, which is the insulated-gate field-effect transistor (IGFET). The IGFET is commonly known as a MOSFET (Metal-Oxide Semiconductor Field-Effect transistor), which is a four-terminal device with one gate, one source, and two drain terminals. The gate terminal is insulated from the main body of the device, that is, there is no direct electrical connection between the gate and the source or drain terminals. A MOSFET works by applying a voltage to the gate terminal, which results in the formation of an electric field on the gate-source junction. This electric field affects the charge carriers in the channel formed between the source and drain terminals, causing them to migrate towards either the drain or the source, thus conducting electric current between the two terminals.

VN2410LZL1G is an excellent choice for applications that require high current and low power dissipation. Its features, such as its 30-V drain-source voltage (VDDS), 0.0055-Ohm typical on-resistance (RON) at VGS = 4.5 V, and 2.8 V threshold voltage, makes it ideal for small footprints and low current applications. The device’s vertical DMOS technology also reduces the typical parasitic capacitance of the junction, increasing the frequency of operation and reducing the power consumption. Its low threshold voltage makes it suitable for low voltage applications, and its low on-resistance reduces the power dissipation in the circuits. Furthermore, its small size makes it suitable for a wide range of applications such as home appliances, consumer electronics, drones, and industrial automation.

In conclusion, VN2410LZL1G is an ideal choice for a wide variety of logic-level load applications due to its features such as 30-V drain-source voltage (VDDS), 0.0055-Ohm typical on-resistance (RON) at VGS = 4.5 V, 2.8 V threshold voltage and low power dissipation. It is widely used in home appliances, consumer electronics, drones and industrial automation.