VN2460N8-G Discrete Semiconductor Products |
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Allicdata Part #: | VN2460N8-GTR-ND |
Manufacturer Part#: |
VN2460N8-G |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Microchip Technology |
Short Description: | MOSFET N-CH 600V 0.2A SOT89-3 |
More Detail: | N-Channel 600V 200mA (Tj) 1.6W (Ta) Surface Mount ... |
DataSheet: | VN2460N8-G Datasheet/PDF |
Quantity: | 2000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 600V |
Current - Continuous Drain (Id) @ 25°C: | 200mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 20 Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 2mA |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 150pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 1.6W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-243AA (SOT-89) |
Package / Case: | TO-243AA |
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The VN2460N8-G is a single N-channel enhancement mode MOSFET. It is a type of transistor that can be used in a variety of applications and it has very good areas of performance, making it a good component to use for many applications. In this article, we will look at the application field of the VN2460N8-G as well as its working principles in detail.
Application Field
The VN2460N8-G is a highly integrated power MOSFET that can be used in many applications. It can be used in motor control, electric power control, and lighting control applications, where it performs very well. It is also well suited for use in high current and AC/DC power control applications, such as in UPS and switching power supplies. Additionally, it is used in portable device applications, such as laptops and cellular phones.
Working Principles
The VN2460N8-G is a type of MOSFET (Metal Oxide Semiconductor Field Effect Transistor). It is an enhancement mode MOSFET, meaning that it is normally “off” and requires the gate voltage to be higher than the source voltage to turn “on”. The VN2460N8-G is a low-voltage MOSFET, with a maximum drain source voltage (VDS) of 10 V, making it well-suited for applications that require low power consumption. It also features a very low on-resistance, as well as a fast reverse recovery time, making it an efficient component for high-current switching applications.
The VN2460N8-G works on the principle of the High Electron Electric Mobility (HEMT). This allows the VN2460N8-G to have a very low gate charge, as well as a very low on-state resistance. This makes it very efficient in many applications, and it is often used in power control applications where efficiency is key. Additionally, it has a very low gate-drain capacitance, making it well suited for use in high-frequency switching applications, such as in RF circuits.
Conclusion
The VN2460N8-G is a single N-channel enhancement mode MOSFET that can be used in a variety of applications, including motor control, electric power control, and lighting control. It features a very low gate charge, as well as a very low on-state resistance, making it a very efficient component. Additionally, it has a very low gate-drain capacitance, making it ideal for use in high-frequency switching applications. All of these features make the VN2460N8-G a great component for many applications.
The specific data is subject to PDF, and the above content is for reference
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