ZTX601STZ Allicdata Electronics
Allicdata Part #:

ZTX601STZ-ND

Manufacturer Part#:

ZTX601STZ

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: TRANS NPN DARL 160V 1A E-LINE
More Detail: Bipolar (BJT) Transistor NPN - Darlington 160V 1A ...
DataSheet: ZTX601STZ datasheetZTX601STZ Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Box (TB) 
Part Status: Active
Transistor Type: NPN - Darlington
Current - Collector (Ic) (Max): 1A
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 10mA, 1A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 500mA, 10V
Power - Max: 1W
Frequency - Transition: 250MHz
Operating Temperature: -55°C ~ 200°C (TJ)
Mounting Type: Through Hole
Package / Case: E-Line-3, Formed Leads
Supplier Device Package: E-Line (TO-92 compatible)
Base Part Number: ZTX601
Description

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The ZTX601STZ is a single bipolar junction transistor (BJT) designed to cover a wide range of application fields. It is one of the most versatile transistor types, representing a great advancement in miniaturization, efficiency, power dissipation, and frequency response, making it an ideal choice for designers. This article will provide an overview of the ZTX601STZ application field and working principle.

The ZTX601STZ is a general-purpose gain device excellent for use in low-power audio amplifiers, pre-amplifier stages, and VHF/UHF/low-noise amplifier stages. It is useful in various types of receiver and transmitter circles as well as digital logic circuits. Additionally, its wide frequency response, low capacitance and low noise characteristics make it ideal for oscillator and switch circuits.

The ZTX601STZ is an NPN transistor, indicated by its pinout: the Emitter, Base, and Collector all have a corresponding letter. It should be noted that the Collector is typically connected to the positive power supply and the Emitter is typically connected to the negative power supply. Additionally, the ZTX601STZ features a minimum guaranteed maximum current gain of 12, with a collector-emitter voltage rating of 25V between 1mADC and 250mADC.

In order to understand the working principle of the ZTX601STZ, it is important to understand the stages of current flow between the Emitter and Collector. As the Base-Emitter junction is forward-biased, minority electrons in the Base region are injected into the Base. These electrons then diffuse across the Base-Collector junction, creating the Emitter-Collector current by combining with majority holes in the Collector region. The amount of minority electrons injected into the Base region is determined by the amount of external current flow, which can be controlled and regulated by the Base current. By controlling the amount of Base current, the Collector current and Collector-Emitter voltage can be regulated, allowing the ZTX601STZ to perform various tasks. This is the primary working principle of a NPN transistor.

The ZTX601STZ is a great choice for those looking for an efficient, versatile, and reliable single bipolar junction transistor. With its wide application field and well-understood working principle, it is perfectly suitable for a variety of projects including low-power audio amplifiers, pre-amplifier stages, VHF/UHF/low-noise amplifier stages, oscillator and switch circuits, and digital logic circuits. Its minimum guaranteed maximum current gain of 12, low noise characteristics, and low capacitance make it a great choice for miniaturizing and powering designs efficiently.

The specific data is subject to PDF, and the above content is for reference

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