Infineon ballast controller - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
AUIRLL024N-ND	AUIRLL024N	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25C: 3.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 65 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 5V Vgs (Max): 16V Input Capacitance (Ciss) (Max) @ Vds: 510pF @ 25V Power Dissipation (Max): 1W (Ta) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SOT-223 Package / Case: TO-261-4, TO-261AA	1000 Order	--
TD122N22KOFHPSA 1-ND	TD122N22KOFHPSA 1	Infineon Technologies	View more Part Status: Active Lead Free Status / RoHS Status: Lead free / RoHS Compliant Structure: Series Connection - SCR/Diode Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of SCRs, Diodes: 1 SCR, 1 Diode Voltage - Off State: 2.4kV Current - On State (It (AV)) (Max): 140A Current - On State (It (RMS)) (Max): 220A Voltage - Gate Trigger (Vgt) (Max): 2V Current - Gate Trigger (Igt) (Max): 200mA Current - Non Rep. Surge 50, 60Hz (Itsm): 3300A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	8+: $76.671
AUIRFR4292-ND	AUIRFR4292	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Discontinued at Digi-Key FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 9.3A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 345 mOhm @ 5.6A, 10V Vgs(th) (Max) @ Id: 5V @ 50A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 705pF @ 25V Power Dissipation (Max): 100W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	--
IPP039N04LGHKSA 1-ND	IPP039N04LGHKSA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 80A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.9 mOhm @ 80A, 10V Vgs(th) (Max) @ Id: 2V @ 45A Gate Charge (Qg) (Max) @ Vgs: 78nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 6100pF @ 25V Power Dissipation (Max): 94W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO-220-3 Package / Case: TO-220-3	1000 Order	1+: $0
IPS075N03LGBKMA 1-ND	IPS075N03LGBKMA 1	Infineon Technologies	View more Series: OptiMOS Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 50A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 15V Power Dissipation (Max): 47W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO251-3 Package / Case: TO-251-3 Stub Leads, IPak	1000 Order	1+: $0
TT570N16KOFHPSA 2-ND	TT570N16KOFHPSA 2	Infineon Technologies	View more Packaging: Bulk Part Status: Active Structure: Series Connection - All SCRs Number of SCRs, Diodes: 2 SCRs Voltage - Off State: 1.6kV Current - On State (It (AV)) (Max): 600A Current - On State (It (RMS)) (Max): 900A Voltage - Gate Trigger (Vgt) (Max): 2.2V Current - Gate Trigger (Igt) (Max): 250mA Current - Non Rep. Surge 50, 60Hz (Itsm): 17000A @ 50Hz Current - Hold (Ih) (Max): 300mA Operating Temperature: -40C ~ 125C Mounting Type: Chassis Mount Package / Case: Module	1000 Order	2+: $146.441
BAV70SH6827XTSA 1TR-ND	BAV70SH6827XTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Diode Configuration: 2 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 150nA @ 70V Operating Temperature - Junction: 150C (Max) Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BAV70S	1000 Order	3000+: $0.0464
IRGP4660D-EPBF- ND	IRGP4660D-EPBF	Infineon Technologies	View more Packaging: Tube Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 600V Current - Collector (Ic) (Max): 100A Current - Collector Pulsed (Icm): 144A Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 48A Power - Max: 330W Switching Energy: 625J (on), 1.28mJ (off) Input Type: Standard Gate Charge: 140nC Td (on/off) @ 25C: 60ns/145ns Test Condition: 400V, 48A, 10 Ohm, 15V Reverse Recovery Time (trr): 115ns Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD	50 Order	--
IRG4PH50SPBF-ND	IRG4PH50SPBF	Infineon Technologies	View more Packaging: Bulk Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Not For New Designs Moisture Sensitivity Level (MSL): 1 (Unlimited) Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 57A Current - Collector Pulsed (Icm): 114A Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 33A Power - Max: 200W Switching Energy: 1.8mJ (on), 19.6mJ (off) Input Type: Standard Gate Charge: 167nC Td (on/off) @ 25C: 32ns/845ns Test Condition: 960V, 33A, 5 Ohm, 15V Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	--
C161CSLFCAFXUMA 1-ND	C161CSLFCAFXUMA 1	Infineon Technologies	View more Series: C16xx Packaging: Tape & Reel (TR) Part Status: Obsolete Core Processor: C166 Core Size: 16-Bit Speed: 25MHz Connectivity: CANbus, EBI/EMI, IC, SPI, UART/USART Peripherals: POR, PWM, WDT Number of I/O: 93 Program Memory Type: ROMless RAM Size: 10K x 8 Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V Data Converters: A/D 12x10b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 128-LQFP Supplier Device Package: P-TQFP-128-2	1000 Order	1+: $0
XMC1301T016F001 6AAXUMA1-ND	XMC1301T016F001 6AAXUMA1	Infineon Technologies	View more Series: XMC1000 Packaging: Tape & Reel (TR) Part Status: Obsolete Core Processor: ARM Cortex-M0 Core Size: 32-Bit Speed: 32MHz Connectivity: IC, LINbus, SPI, UART/USART Peripherals: Brown-out Detect/Reset, IS, POR, PWM, WDT Number of I/O: 11 Program Memory Size: 16KB (16K x 8) Program Memory Type: FLASH RAM Size: 16K x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Data Converters: A/D 11x12b Oscillator Type: Internal Operating Temperature: -40C ~ 85C (TA) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Supplier Device Package: PG-TSSOP-16-8	1000 Order	1+: $0
TC234LP32F200FA CKXUMA1-ND	TC234LP32F200FA CKXUMA1	Infineon Technologies	View more Series: AURIX Part Status: Discontinued at Digi-Key Core Processor: TriCore Core Size: 32-Bit Speed: 200MHz Connectivity: CANbus, FlexRay, LINbus, QSPI Peripherals: DMA, WDT Number of I/O: 120 Program Memory Size: 2MB (2M x 8) Program Memory Type: FLASH EEPROM Size: 128K x 8 RAM Size: 192K x 8 Voltage - Supply (Vcc/Vdd): 3.3V Data Converters: A/D 24x12b Oscillator Type: External Operating Temperature: -40C ~ 125C (TA)	1000 Order	1+: $0
TC237L32F200SAC LXUMA1-ND	TC237L32F200SAC LXUMA1	Infineon Technologies	View more Series: * Part Status: Discontinued at Digi-Key	1000 Order	1+: $0
C167SRLMHABXQLA 1-ND	C167SRLMHABXQLA 1	Infineon Technologies	View more Series: * Part Status: Last Time Buy	1000 Order	1+: $0
SKW15N120FKSA1- ND	SKW15N120FKSA1	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete IGBT Type: NPT Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 30A Current - Collector Pulsed (Icm): 52A Vce(on) (Max) @ Vge, Ic: 3.6V @ 15V, 15A Power - Max: 198W Switching Energy: 1.9mJ Input Type: Standard Gate Charge: 130nC Td (on/off) @ 25C: 18ns/580ns Test Condition: 800V, 15A, 33 Ohm, 15V Reverse Recovery Time (trr): 65ns Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	1000 Order	1+: $0
FP30R06YE3B4BOM A1-ND	FP30R06YE3B4BOM A1	Infineon Technologies	View more Series: * Part Status: Not For New Designs	1000 Order	20+: $40.4687
IRG7PG35UPBF-ND	IRG7PG35UPBF	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete IGBT Type: Trench Voltage - Collector Emitter Breakdown (Max): 1000V Current - Collector (Ic) (Max): 55A Current - Collector Pulsed (Icm): 60A Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Power - Max: 210W Switching Energy: 1.06mJ (on), 620J (off) Input Type: Standard Gate Charge: 85nC Td (on/off) @ 25C: 30ns/160ns Test Condition: 600V, 20A, 10 Ohm, 15V Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC	1000 Order	1+: $0
FF300R07ME4B11B OSA1-ND	FF300R07ME4B11B OSA1	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: 2 Independent Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 390A Power - Max: 1100W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 300A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 18.5nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	6+: $71.3636
FS150R07N3E4B11 BOSA1-ND	FS150R07N3E4B11 BOSA1	Infineon Technologies	View more Part Status: Last Time Buy IGBT Type: Trench Field Stop Configuration: Three Phase Inverter Voltage - Collector Emitter Breakdown (Max): 650V Current - Collector (Ic) (Max): 150A Power - Max: 430W Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 150A Current - Collector Cutoff (Max): 1mA Input Capacitance (Cies) @ Vce: 9.3nF @ 25V Input: Standard NTC Thermistor: Yes Operating Temperature: -40C ~ 150C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	30+: $86.3877
FZ800R45KL3B5NO SA2-ND	FZ800R45KL3B5NO SA2	Infineon Technologies	View more Part Status: Active IGBT Type: Trench Field Stop Configuration: Half Bridge Voltage - Collector Emitter Breakdown (Max): 4500V Current - Collector (Ic) (Max): 1600A Power - Max: 9000W Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 800A Current - Collector Cutoff (Max): 5mA Input Capacitance (Cies) @ Vce: 3.1nF @ 25V Input: Standard NTC Thermistor: No Operating Temperature: -50C ~ 125C Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	2+: $0.63
PXFC211507SCV1R 250XTMA1-ND	PXFC211507SCV1R 250XTMA1	Infineon Technologies	View more Series: * Part Status: Active	1000 Order	250+: $40.131
IPG20N04S408ATM A1TR-ND	IPG20N04S408ATM A1	Infineon Technologies	View more Series: OptiMOS Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 20A Rds On (Max) @ Id, Vgs: 7.6 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 30A Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2940pF @ 25V Power - Max: 65W Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	5000 Order	--
FZ2400R17KF6CB2 S1NDSA1-ND	FZ2400R17KF6CB2 S1NDSA1	Infineon Technologies	View more Series: * Part Status: Obsolete	1000 Order	1+: $0
BCW68HE6327HTSA 1TR-ND	BCW68HE6327HTSA 1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Last Time Buy Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 45V Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 20nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V Power - Max: 330mW Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Base Part Number: BCW68	1000 Order	--
PTFA181001FV4R2 50FTMA1-ND	PTFA181001FV4R2 50FTMA1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: LDMOS Frequency: 1.88GHz Gain: 16.5dB Voltage - Test: 28V Current Rating: 1A Current - Test: 750mA Power - Output: 100W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37248-2 Base Part Number: PTFA181001	1000 Order	1+: $0
PTFA192401FV4XW SA1-ND	PTFA192401FV4XW SA1	Infineon Technologies	View more Packaging: Tray Part Status: Obsolete Transistor Type: LDMOS Frequency: 1.96GHz Gain: 16dB Voltage - Test: 30V Current Rating: 10A Current - Test: 1.6A Power - Output: 50W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37260-2 Base Part Number: PTFA192401	1000 Order	1+: $0
IRF7904TRPBFTR- ND	IRF7904TRPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tape & Reel (TR) Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 7.6A, 11A Rds On (Max) @ Id, Vgs: 16.2 mOhm @ 7.6A, 10V Vgs(th) (Max) @ Id: 2.25V @ 25A Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 15V Power - Max: 1.4W, 2W Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO Base Part Number: IRF7904PBF	1000 Order	--
BCR141TE6327-ND	BCR 141T E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 130MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: PG-SC-75 Base Part Number: BCR141	1000 Order	1+: $0
BCR158L3E6327-N D	BCR 158L3 E6327	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: PG-TSLP-3-4 Base Part Number: BCR158	1000 Order	1+: $0
BCR133SB6327XTT R-NDTR-ND	BCR133SB6327XT	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Discontinued at Digi-Key Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Frequency - Transition: 130MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6 Base Part Number: BCR133S	1000 Order	1+: $0
BCR198SE6327BTS A1TR-ND	BCR198SE6327BTS A1	Infineon Technologies	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 10mA Frequency - Transition: 190MHz Power - Max: 250mW Mounting Type: Surface Mount Package / Case: 6-VSSOP, SC-88, SOT-363 Supplier Device Package: PG-SOT363-6	1000 Order	1+: $0
IKW03N120H2FKSA 1-ND	IKW03N120H2FKSA 1	Infineon Technologies	View more Packaging: Tube Part Status: Obsolete Voltage - Collector Emitter Breakdown (Max): 1200V Current - Collector (Ic) (Max): 9.6A Current - Collector Pulsed (Icm): 9.9A Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 3A Power - Max: 62.5W Switching Energy: 290J Input Type: Standard Gate Charge: 22nC Td (on/off) @ 25C: 9.2ns/281ns Test Condition: 800V, 3A, 82 Ohm, 15V Reverse Recovery Time (trr): 42ns Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: PG-TO247-3	1000 Order	1+: $0
FF23MR12W1M1B11 BOMA1-ND	FF23MR12W1M1B11 BOMA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tray Part Status: Active FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25C: 50A Rds On (Max) @ Id, Vgs: 23 mOhm @ 50A, 15V Vgs(th) (Max) @ Id: 5.55V @ 20mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 800V Power - Max: 20mW Operating Temperature: -40C ~ 150C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: Module	1000 Order	1+: $61.3683
IRAM136-1561A2- ND	IRAM136-1561A2	Infineon Technologies	View more Series: iMOTION Part Status: Obsolete Type: IGBT Configuration: 3 Phase Current: 15A Voltage: 600V Voltage - Isolation: 2000Vrms Package / Case: 29-PowerSSIP Module, 21 Leads, Formed Leads	1000 Order	1+: $0
IRAMS10UP60B-S- ND	IRAMS10UP60B-S	Infineon Technologies	View more Part Status: Obsolete Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads	1000 Order	1+: $0
IPA60R060P7XKSA 1-ND	IPA60R060P7XKSA 1	Infineon Technologies	View more Series: CoolMOS P7 Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 48A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 60 mOhm @ 15.9A, 10V Vgs(th) (Max) @ Id: 4V @ 800A Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2895pF @ 400V Power Dissipation (Max): 29W (Tc) Operating Temperature: -55C ~ 150C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO220 Full Pack Package / Case: TO-220-3 Full Pack	174 Order	--
IRFB4410ZGPBF-N D	IRFB4410ZGPBF	Infineon Technologies	View more Series: HEXFET Packaging: Tube Part Status: Not For New Designs FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 97A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9 mOhm @ 58A, 10V Vgs(th) (Max) @ Id: 4V @ 150A Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 4820pF @ 50V Power Dissipation (Max): 230W (Tc) Operating Temperature: -55C ~ 175C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	1303 Order	--
ND350N16KHPSA1- ND	ND350N16KHPSA1	Infineon Technologies	View more Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600V Current - Average Rectified (Io): 350A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 30mA @ 1600V Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: BG-PB50ND-1 Operating Temperature - Junction: -40C ~ 135C	1000 Order	3+: $82.6371
D170S25CXPSA1-N D	D170S25CXPSA1	Infineon Technologies	View more Packaging: Bulk Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2500V Current - Average Rectified (Io): 255A Voltage - Forward (Vf) (Max) @ If: 2.3V @ 800A Speed: Standard Recovery >500ns, > 200mA (Io) Current - Reverse Leakage @ Vr: 5mA @ 2500V Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Operating Temperature - Junction: -40C ~ 140C	1000 Order	1+: $147.407
IDH15S120AKSA1- ND	IDH15S120AKSA1	Infineon Technologies	View more Series: CoolSiC Packaging: Tube Part Status: Obsolete Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.8V @ 15A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 360A @ 1200V Capacitance @ Vr, F: 750pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: PG-TO220-2-2 Operating Temperature - Junction: -55C ~ 175C	1000 Order	1+: $0

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