Allicdata Part #: | AUIRLL024N-ND |
Manufacturer Part#: |
AUIRLL024N |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CH 55V 3.1A SOT-223 |
More Detail: | N-Channel 55V 3.1A (Ta) 1W (Ta) Surface Mount SOT-... |
DataSheet: | AUIRLL024N Datasheet/PDF |
Quantity: | 1000 |
Vgs(th) (Max) @ Id: | 2V @ 250µA |
Package / Case: | TO-261-4, TO-261AA |
Supplier Device Package: | SOT-223 |
Mounting Type: | Surface Mount |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Power Dissipation (Max): | 1W (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 510pF @ 25V |
Vgs (Max): | ±16V |
Gate Charge (Qg) (Max) @ Vgs: | 15.6nC @ 5V |
Series: | HEXFET® |
Rds On (Max) @ Id, Vgs: | 65 mOhm @ 3.1A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 3.1A (Ta) |
Drain to Source Voltage (Vdss): | 55V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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AUGIRLL024N is an advanced type of transistor, specifically a metal-oxide-semiconductor field-effect transistor (MOSFET). It is an integrated package that includes a driver, a power MOSFET, a bipolar transistor and a low-voltage power management circuit all in one package. It is designed to enable rapid switching and high speed performance while still providing superior power efficiency and good noise immunity. Additionally, it supports multiple power management features such as overcurrent and overvoltage protection, reverse-leakage current protection and temperature protection.
This type of transistor is used in applications such as portable electronics, automotive, industrial applications, and power supplies. AUGIRLL024N provides a high switching frequency and low power dissipation in high-power applications, providing efficient power management and longevity. It operates with low-voltage power for small areas, making it ideal for compact and space-saving applications. Additionally, its high-level on-resistance and marginal gate charge reduce losses, increasing efficiency and saving overall power. It is also capable of precise current control and temperature stability.
The working principle of AUGIRLL024N is relatively simple. It is a three-terminal device with two voltage inputs, the gate-source voltage (VGS) and the drain-source voltage (VDS), and one current output, the drain current (ID). When a voltage is applied to the gate-source terminal, it creates an electric field that controls the flow of electrons between the terminals. Electrons can flow freely between the source and drain when the gate-source voltage is high enough, allowing current to flow freely between them. When the gate-source voltage is low, electrons cannot flow freely and the current is blocked.
In other words, AUGIRLL024N operates by controlling the flow of current between the source and drain through the application of a gate-source voltage (VGS). By varying the VGS, the current can be turned off or adjusted depending on the needs of the application. This makes it an ideal choice for applications that require precise control of current, as well as power supplies that require high efficiency and good noise immunity. Additionally, the low gate charge and high gate-source input impedance reduce losses and increase efficiency.
AUGIRLL024N is ideal for applications that require precise current control, high switching speed, and high efficiency. It operates with low-voltage power and low gate charge and input impedance, making it an ideal choice for space-saving applications. Additionally, it has various power management features such as overcurrent and overvoltage protection, reverse-leakage current protection and temperature protection, making it a versatile and reliable device for any application.
The specific data is subject to PDF, and the above content is for reference
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