| Allicdata Part #: | PTFA192401FV4XWSA1-ND |
| Manufacturer Part#: |
PTFA192401FV4XWSA1 |
| Price: | $ 0.00 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Infineon Technologies |
| Short Description: | IC FET RF LDMOS 240W H-37260-2 |
| More Detail: | RF Mosfet LDMOS 30V 1.6A 1.96GHz 16dB 50W H-37260-... |
| DataSheet: | PTFA192401FV4XWSA1 Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Obsolete |
| Transistor Type: | LDMOS |
| Frequency: | 1.96GHz |
| Gain: | 16dB |
| Voltage - Test: | 30V |
| Current Rating: | 10µA |
| Noise Figure: | -- |
| Current - Test: | 1.6A |
| Power - Output: | 50W |
| Voltage - Rated: | 65V |
| Package / Case: | 2-Flatpack, Fin Leads, Flanged |
| Supplier Device Package: | H-37260-2 |
| Base Part Number: | PTFA192401 |
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PTFA192401FV4XWSA1 is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) designed as a radio-frequency (RF) device. It is a monolithic integrated circuit (IC) that uses a four-terminal structure for its construction. This transistor device has a wide range of applications in the fields of communications, audio, and automotive electronics.
This transistor device is constructed from an insulated-gate field-effect transistor (IGFET) and a single-gate junction-field-effect transistor (JFET), this single-gate JFET is used to control the voltage applied to the gate of the IGFET. The IGFET is formed by combining a MOSFET and a resistive element together. This resistive element is attached to the gate of the MOSFET which allows for accurate voltage control of the IGFET.
This type of transistor is used in applications that require a small size, efficient operation, and precise voltage control. The PTFA192401FV4XWSA1 is commonly used in RF applications due to its small size, its ability to handle high frequencies, and its precise voltage control. This device is also used in audio applications because it has a low-frequency response range. It is also used in automotive electronics applications due to its small size, robust operation, and fast switching speeds.
The working principle behind the PTFA192401FV4XWSA1 is that it uses the voltage applied to the gate to control the flow of current between the drain and source. When the gate voltage is increased, the current flowing through the device is also increased. The device can be used as a switch or an amplifier and can be used to control the magnitude of an alternating signal. The device also has a low capacitance which allows it to switch quickly and accurately.
In summary, the PTFA192401FV4XWSA1 is a four-terminal voltage-controlled transistor device that is used in a wide range of RF applications. It has a small size, efficient operation, and a precise voltage control range. The device uses the gate voltage to control the current between the drain and source and is capable of amplifying and switching signals. The device also has a low capacitance which allows for fast and accurate switching.
The specific data is subject to PDF, and the above content is for reference
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| PTFA211801EV5XWSA1 | Infineon Tec... | 0.0 $ | 1000 | FET RF 65V 2.14GHZ H36260... |
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PTFA192401FV4XWSA1 Datasheet/PDF