Allicdata Part #: | IPS075N03LGBKMA1-ND |
Manufacturer Part#: |
IPS075N03LGBKMA1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Infineon Technologies |
Short Description: | MOSFET N-CHANNEL 30V 50A TO251-3 |
More Detail: | N-Channel 30V 50A (Tc) 47W (Tc) Through Hole PG-TO... |
DataSheet: | IPS075N03LGBKMA1 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Vgs(th) (Max) @ Id: | 2.2V @ 250µA |
Package / Case: | TO-251-3 Stub Leads, IPak |
Supplier Device Package: | PG-TO251-3 |
Mounting Type: | Through Hole |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Power Dissipation (Max): | 47W (Tc) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 1900pF @ 15V |
Gate Charge (Qg) (Max) @ Vgs: | 18nC @ 10V |
Series: | OptiMOS™ |
Rds On (Max) @ Id, Vgs: | 7.5 mOhm @ 30A, 10V |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Current - Continuous Drain (Id) @ 25°C: | 50A (Tc) |
Drain to Source Voltage (Vdss): | 30V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | N-Channel |
Part Status: | Obsolete |
Packaging: | Tube |
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The IPS075N03LGBKMA1 transistor is a single insulated gate bipolar junction transistor (IGBT) designed to take power electronics to the next level. It is based on the third-generation IGBT structure, which enables efficient switching of high-power signal in motor control and other applications. This article will discuss the application field and working principle of the IPS075N03LGBKMA1 transistor.
The IPS075N03LGBKMA1 transistor is suitable for high-power switching applications such as motor control, PLCs, and SMPS. It can handle currents up to 150A and is available in both a standard TO package and a low-profile TO-263-L package. The voltage is 75V, the maximum gate-emitter voltage is +/- 15V and the switching frequency is up to 25kHz. This makes it ideal for applications requiring high speed and power.
The IPS075N03LGBKMA1 transistor works by allowing current to flow between its source and drain terminals when a voltage is applied to its gate terminal. This is known as the “Junction Field-Effect Transistor (JFET) effect”. The current flow is then controlled by the voltage applied to the gate. As the voltage applied to the gate increases, the current flow will also increase, allowing for more power to be switched. The JFET effect is more efficient than other types of transistors, making it ideal for high-power switching applications.
The IPS075N03LGBKMA1 transistor has several features that make it particularly suitable for motor control applications. For example, it has a low gate charge (Qg) and fast switching times. It also has a low on-resistance (Rdson) and can handle higher frequencies than other types of transistors. This makes it ideal for applications that require fast response times and high efficiency.
The IPS075N03LGBKMA1 transistor is also suitable for PLCs and SMPS. It is highly efficient and has a low Rdson, making it ideal for applications that require low power consumption. Additionally, its fast switching times make it suitable for switch-mode power supplies, which require high accuracy in switching and fast response times.
The IPS075N03LGBKMA1 transistor is an efficient and reliable single IGBT for use in high-power switching applications. Its features make it suitable for motor control, PLCs, and Switch-mode power supplies. Its low on-resistance and gate charge, along with its fast switching times and high efficiency make it an ideal solution for those seeking a reliable high-power switch.
The specific data is subject to PDF, and the above content is for reference
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